参数资料
型号: SFH655A
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
封装: ROHS COMPLIANT, PLASTIC, DIP-4
文件页数: 2/8页
文件大小: 125K
代理商: SFH655A
www.vishay.com
2
Document Number 83667
Rev. 1.4, 26-Oct-04
SFH612A/ SFH655A
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown
voltage
BVCEO
55
V
Emitter-collector breakdown
voltage
BVECO
6.0
V
Collector (load) current
IC
125
mA
Derate linearly from 25 °C
2.00
mW/°C
Power dissipation
Pdiss
150
mW
Parameter
Test condition
Symbol
Value
Unit
Derate linearly from 25 °C
3.33
mW/°C
Total power dissipation
Ptot
250
mW
Isolation test voltage between
input and output, climate acc. to
IEC 60068-1:1988
t = 1.0 s
VISO
5300
VRMS
Creepage distance
≥ 7.0
mm
Clearance
≥ 7.0
mm
Comparative tracking index acc.
to DIN IEC 112/VDE 0303, part
1:06-84
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Storage temperature range
Tstg
- 55 to + 150
°C
Operating temperature range
Tamb
- 55 to + 100
°C
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm
260
°C
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 10 mA
VF
1.15
1.5
V
Reverse current
VR = 6.0 V
IR
0.02
10
A
Capacitance
VR = 0, f = 1.0 MHz
CO
14
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
ICE = 100 ABVCEO
55
V
Emitter-collector breakdown
voltage
IEC = 10 ABVECO
6.0
V
Collector-emitter dark current
VCE = 40 V
ICEO
12
400
nA
Collector-emitter capacitance
VCE = 0 V, f=1.0 MHz
CCE
13.5
pF
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