Document Number: 83686
www.vishay.com
Revision 17-August-01
1
FFEATURES
Current Transfer Ratios
– SFH690AT, 50%–150%
– SFH690BT, 100%–300%
– SFH690ABT, 50%–300%
SOP (Small Outline Package)
Isolation Test Voltage, 3750 VRMS (1.0 s)
High Collector-Emitter Breakdown Voltage,
VCEO=70 V
Low Saturation Voltage
Fast Switching Times
Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
Temperature Stable
Low Coupling Capacitance
End-Stackable, .100" (2.54 mm) Spacing
Underwriters Lab File #52744
APPLICATIONS
High density mounting or space sensitive PCBs
PLCs
Telecommunication
DESCRIPTION
The SFH690xT family has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar pho-
totransistor detector, and is incorporated in a 4 pin 100
mil lead pitch miniat package. It features a high current
transfer ratio, low coupling capacitance, and high isola-
tion voltage.
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
The SFH690xT will be offered in tape and reel format
only. There are 2000 parts per reel. For the SFH690AT,
the product will be marked as SFH690A and the
SFH690BT will be marked as SFH690B. The
SFH690ABT will be marked as SFH690A or SFH690B.
Absolute Maximum Ratings, TA=25°C (except where noted)
Emitter
Reverse Voltage ............................................................................... 6.0 V
DC Forward Current.......................................................................50 mA
Surge Forward Current (tP≤10 s)....................................................2.5 A
Total Power Dissipation ............................................................... 80 mW
Detector
Collector-Emitter Voltage .................................................................. 70 V
Emitter-Collector Voltage ................................................................. 7.0 V
Collector Current............................................................................50 mA
Collector Current (tP≤1.0 ms).......................................................100 mA
Total Power Dissipation ............................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector (1.0 s)....................................................................3750 VRMS
Creepage
.......................................................................................... ≥5.33 mm
Clearance
.......................................................................................... ≥5.08 mm
Insulation Thickness between Emitter and Detector
.................. ≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1
.................................................... ≥175
Isolation Resistance
VIO=500 V, TA=25°C........................................................................≥10
12
VIO=500 V, TA=100°C .....................................................................≥10
11
Storage Temperature Range ............................................. –55 to +150
°C
Ambient Temperature Range ............................................ –55 to +100
°C
Junction Temperature .................................................................... 100
°C
Soldering Temperature (max. 10 s Dip Soldering
Distance to Seating Plane
≥1.5 mm).......................................... 260°C
0.190 (4.83)
0.170 (4.32)
0.184 (4.67)
0.164 (4.17)
0.024 (0.61)
0.034 (0.86)
1
4
2
3
0.018 (0.46)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
LEADS COPLANARITY
0.004 (0.10)
0.018 (0.46)
0.013 (0.33)
0.025 (0.63)
0.015 (0.38)
0.220 (5.59)
0.200 (5.08)
40
10
0.008 (0.20)
0.004 (0.10)
0.284 (7.21)
0.264 (6.71)
Pin one I.D. (on chamfer side of package)
0.080 (2.03)
0.075 (1.91)
6
Max.
1
2
4
3
Emitter
Collector
Anode
Cathode
Dimensions in inches (mm)
SFH690AT/690BT/690ABT
Phototransistor Optocoupler
Miniat SOP Package