参数资料
型号: SFH690ATX001
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: ROHS COMPLIANT, MINI-FLAT, SOP-4
文件页数: 2/8页
文件大小: 102K
代理商: SFH690ATX001
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83686
750
Rev. 1.8, 16-May-08
SFH690ABT/SFH690AT/SFH690BT/SFH690CT/SFH690DT
Vishay Semiconductors
Optocoupler Phototransistor Output,
SOP-4, Mini-Flat Package
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VEC
7.0
V
Collector current
IC
50
mA
tp ≤ 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter and
detector (1.0 s)
VISO
3750
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Soldering temperature (2)
max. 10 s dip soldering distance to
seating plane
≥ 1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 5 mA
VF
1.15
1.4
V
Reverse current
VR = 6.0 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1.0 MHz
CO
14
pF
Thermal resistance
RthJA
750
K/W
OUTPUT
Collector emitter leakage current
VCE = 20 V
ICEO
100
nA
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
2.8
pF
Thermal resistance
RthJA
500
K/W
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0
50
100
150
200
0
255075
100
125
150
18484
P
tot
-
Po
w
er
Dissipation
(m
W
)
Phototransistor
Diode
Tamb - Ambient Temperature (°C)
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