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参数资料
| 型号： | SFH691AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, MINI-FLAT, SMD, SOP-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 95K |
| 代理商： | SFH691AT |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83719
2
Rev. 1.9, 17-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH691AT
Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-4,
AC Input, Mini-Flat Package
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
DC forward current
IF
± 50
mA
Surge forward current
tp 10 μs
IFSM
± 2.5
A
Total power dissipation
Pdiss
80
mW
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VEC
7V
Collector current
IC
50
mA
tp 1 ms
IC
100
mA
Total power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter
and detector
1 s
VISO
3750
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (1)
max. 10 s dip soldering distance
to seating plane
1.5 mm
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 5 mA
VF
1.15
1.4
V
Capacitance
VR = 0 V, f = 1 MHz
CO
29
pF
Thermal resistance
Rthja
750
°C/W
OUTPUT
Collector emitter leakage current
VCE = 20 V
ICEO
100
nA
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5pF
Thermal resistance
Rthja
500
°C/W
COUPLER
Collector emitter saturation voltage
IF = ± 10 mA, IC = 2 mA
VCEsat
0.1
0.3
V
Coupling capacitance
f = 1 MHz
CC
0.4
pF
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Current transfer ratio
IF = ± 5 mA, VCE = 5 V
CTR
50
120
300
%
CTR1/CTR2
CTR1 = IC1/IF1, CTR2 = IC2/IF2
0.3
3
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