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参数资料
| 型号： | SFM9214TF |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 中文描述： | 0.45 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/9页 |
| 文件大小： | 368K |
| 代理商： | SFM9214TF |
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
@ Notes :
1. V
GS
= -10 V
2. I
D
= -0.8 A
R
DS(o
n)
,
(
Nor
ma
liz
ed
)
D
rai
n-S
ou
rce
O
n-R
es
ist
anc
e
T
J
, Junction Temperature
[
o
C]
-75
-50
-25
0
25
50
75
100
125
150
175
0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= -250
A
-B
V
DSS
,
(No
rm
al
ize
d)
D
r
a
in-
So
ur
ce
Br
ea
kdo
wn
Vo
lt
ag
e
T
J
, Junction Temperature
[
o
C]
SFM9214
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
0.01 ms
10 ms
DC
1 ms
0.1 ms
@ Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
-I
D
,
Dr
ai
n
Cu
rr
en
t
[A
]
-V
DS , Drain-Source Voltage
[V]
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
-I
D
,
Dr
ai
n
Cu
rr
en
t
[A
]
T
c , Case Temperature
[
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
0
10
1
10
2
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θ JC
(t)=77
o C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θ JC
(t)
Z
θ
JC
(t)
,
T
herma
l
Re
spons
e
t
1
, Square Wave Pulse Duration
[sec]
P-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
Fig 11. Thermal Response
Fig 10. Max. Drain Current vs. Case Temperature
Fig 9. Max. Safe Operating Area
P
DM
.
t
1.
t
2.
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