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参数资料
| 型号： | SFUI4096J1BP2TO-I-DT-211-STD |
| 厂商： | Swissbit NA Inc |
| 文件页数： | 14/20页 |
| 文件大小： | 0K |
| 描述： | FLASH DRIVE USB MODULE U-110 4G |
| 视频文件： | Swissbit Manufacturing Overview |
| RoHS指令信息： | Environment Protection Declaration |
| 标准包装： | 36 |
| 系列： | U-110 |
| 存储器类型： | 闪存 - NAND |
| 存储容量： | 4GB |
| 封装/外壳： | 模块 |
| 其它名称： | 1052-1039 |
14 Best Practices
There are a number of best practices to reach the maximum life time.
14.1 Wear Leveling and Spare Block Management
The device uses zone based flash management (zones also called as management units). This means that the user
accessible data range (LBA area) is evenly divided into multiple zones, which are all managed separately for both,
wear leveling (dynamic and static) and for spare & bad block management.
USB H OST INTERFACE
USB F LASH D RIVE
FIRST SECTOR (LBA 0)
LAST SECTOR
Z ONE 1 (MU1)
Z ONE 2 (MU2)
Z ONE 3 (MU3)
Z ONE 4 (MU4)
*MU=Management Unit
The number of zones is depending on the
device capacity and can be read out using the
Swissbit Life Time Monitoring tool. The tool will
show the number of available spare blocks per
management unit (zone). The devices need a
minimum number of 2 spare blocks per unit to
work with. If the first unit reaches this value,
the device will be write-protected by the
firmware.
To get optimal life time, write accesses must be
evenly distributed over all zones. This can, for
example, be achieved by using multiple partitions and by then distributing the data between the partitions.
14.1 Device Removal & Power Failure
User data can be lost or corrupted if power is interrupted while the UFD is writing data. To avoid data loss, it is
necessary to avoid power interruption while the device is busy. This can be made sure by always using the host
(e.g. Windows) shutdown mechanisms or by detaching the device in the operating system before unplugging it.
Swissbit also offers an Application Note “Design - In Guide” that describes techniques to reduce data loss on power
failure, if power failure absolutely can’t be avoided.
14.2 Lifetime end handling
If the flash reaches its end of life, the number of bad blocks will increase (bad flash blocks will be replaced with
spare blocks). There exist different side effects with negative data influence by degraded flash cells. Sometimes
bit errors can occur because of effects that are not immediately detected by the flash, e.g. effects like program
disturb or read disturb, which means that the bad block recognition does not always prevent data loss.
When the number of bit errors in a sector exceeds the ECC correcting capabilities, invalid (uncorrected) data can
be reported back to the host. Because of these effects it is strongly recommended to replace devices that are
nearing their end of life. One good indicator would be the current spare blocks per unit should not be reducing
below 5. It is in the responsibility of the system integrator to account for the flash usage per zone. Swissbit offers
support for calculating expected life time if the exact use case is provided (e.g. by providing low level [USB
interface] write statistics).
For notes on reducing flash stress, Swissbit offers an Application Note called “Design - In Guide”.
Please contact your sales channel for more information or send a mail to sales@swissbit.com .
Swissbit AG
Industriestrasse 4
CH-9552 Bronschhofen
Switzerland
Swissbit reserves the right to change products or specifications without notice.
www.swissbit.com
industrial@swissbit.com
Revision: 1.20
U-110_data_sheet_UI-xxBP_Rev120
Page 14 of 20
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| SFUI4096K1BP2TO-I-DT-211-STD | 功能描述:UFD FLASH 4GB TSOP RoHS:是 类别:存储卡，模块 >> 存储器 - 模块 系列:* 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
| SFUI8192J1AB1TO-I-GS-2A1-STD | 功能描述:MODULE FLASH NAND MLC 8GB 制造商:swissbit 系列:U-45 零件状态:在售 存储器类型:FLASH - NAND（MLC） 存储容量:8GB 速度:- 封装/外壳:模块 标准包装:1 |
| SFUI8192J1AB2TO-I-MS-211-STD | 功能描述:MODULE FLASH NAND SLC 8GB 制造商:swissbit 系列:U-400 零件状态:在售 存储器类型:FLASH - NAND（SLC） 存储容量:8GB 速度:- 封装/外壳:模块 标准包装:1 |
| SFUI8192J1BP2TO-I-QT-211-STD | 功能描述:FLASH DRIVE USB MODULE U-110 8G RoHS:是 类别:存储卡，模块 >> 存储器 - 模块 系列:U-110 标准包装:100 系列:- 存储器类型:SDRAM 存储容量:1GB 速度:133MHz 特点:- 封装/外壳:168-DIMM |
| SFUI8192J3BP2TO-C-QT-221-STD | 制造商:SWISSBIT 功能描述:UFD MODULE U-110 DENSITY COMMERCIAL - Trays |
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