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参数资料
| 型号： | SG5772F |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.5 A, 16 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | CERAMIC, FLAT PACK-10 |
| 文件页数： | 2/5页 |
| 文件大小： | 66K |
| 代理商： | SG5772F |
DIODE ARRAY SERIES
6/90 Rev 1.1 2/94
LINFINITY Microelectronics Inc.
Copyright
1994
11861 Western Avenue
∞
∞ Garden Grove, CA 92841
2
(714) 898-8121
∞
∞ FAX: (714) 893-2570
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (V
BR) ...................................................
Output Current (I
O), TC = 25°C
Continuous ................................................................
60V
500mA
Operating Junction Temperature
Hermetic (J, F Packages) ............................................
Storage Temperature Range ............................
150
°C
-65
°C to 200°C
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
J Package:
Thermal Resistance-Junction to Case,
θ
JC ..................
30°C/W
Thermal Resistance-Junction to Ambient,
θ
JA .............. 80°C/W
F Package (10 Pin):
Thermal Resistance-Junction to Case,
θ
JC ..................
80°C/W
Thermal Resistance-Junction to Ambient,
θ
JA ............ 145°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case,
θ
JC ..................
80°C/W
Thermal Resistance-Junction to Ambient,
θ
JA ............ 140°C/W
THERMAL DATA
Note A. Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
Note B. The above numbers for
θ
JC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The
θ
JA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
Operating Ambient Temperature Range
SG5768 .......................................................... -55
°C to 150°C
SG5770 .......................................................... -55
°C to 150°C
SG5772 .......................................................... -55
°C to 150°C
Operating Ambient Temperature Range
SG5774 .......................................................... -55
°C to 150°C
SG6506 .......................................................... -55
°C to 150°C
SG6507 .......................................................... -55
°C to 150°C
SG6508 .......................................................... -55
°C to 150°C
SG6509 .......................................................... -55
°C to 150°C
RECOMMENDED OPERATING CONDITIONS (Note 3)
Note 3. Range over which the device is functional.
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply for the operating temperature of T
A = 25°C for each diode. Low duty cycle pulse testing techniques
are used which maintains junction and case temperatures equal to the ambient temperature.)
1.0
1.1
1.5
1.0
100
50
4
40
20
V
nA
A
pf
ns
Breakdown Voltage (V
BR)
Forward Voltage (V
F)
Reverse Current (I
R)
Capacitance (C) (Note 4)
Forward Recovery Time (t
fr )
(Note 4)
Reverse Recovery Time (t
rr)
(Note 4)
60
SG5768/SG6506
Test Conditions
Units
Parameter
Note 4. The parameters, although guaranteed, are not 100% tested in production.
Min. Typ. Max.
I
R = 10A
Duty Cycle
≤ 2%, 300 s pulse
I
F = 100mA
I
F = 200mA
I
F = 500mA
I
F = 10mA, TA = -55°C
V
R = 40V
V
R = 40V, TA = 150°C
V
R = 0V, f = 1MHz, Pin-to-pin
I
F = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50
I
F = IR = 200mA, irr = 20mA, RL = 100
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