- 您现在的位置：买卖IC网 > PDF目录225180 > SGW23N60UF (FAIRCHILD SEMICONDUCTOR CORP) Ultra-Fast IGBT PDF资料下载
参数资料
| 型号： | SGW23N60UF |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Ultra-Fast IGBT |
| 中文描述： | 23 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | D2PAK-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 563K |
| 代理商： | SGW23N60UF |
2002 Fairchild Semiconductor Corporation
SGW23N60UF Rev. A1
IGBT
S
G
W23N60UF
SGW23N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 12A
High input impedance
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol
Description
SGW23N60UF
Units
VCES
Collector-Emitter Voltage
600
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C23
A
Collector Current
@ TC = 100°C12
A
ICM (1)
Pulsed Collector Current
92
A
PD
Maximum Power Dissipation
@ TC = 25°C
100
W
Maximum Power Dissipation
@ TC = 100°C40
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300
°C
Symbol
Parameter
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
--
1.2
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
--
40
°C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G
C
E
G
E
C
D2-PAK
相关PDF资料 |
PDF描述 |
|---|---|
| SH7045F | 32-BIT, RISC MICROCONTROLLER, PQFP144 |
| SHD118536PB | 120 A, SILICON, RECTIFIER DIODE |
| SHL-D55-01 | SNAP ACTING/LIMIT SWITCH, SPST, MOMENTARY, 0.1A, 30VDC, 3.5mm, PANEL MOUNT |
| SHL-Q2255 | SNAP ACTING/LIMIT SWITCH, SPST, MOMENTARY, 10A, 14VDC, 3.5mm, PANEL MOUNT |
| SHSPOST-BUILDIN | BARRIER POST |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SGW23N60UFD | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Ultra-Fast IGBT |
| SGW23N60UFDTM | 功能描述:IGBT 晶体管 600V/ 12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGW23N60UFTM | 功能描述:IGBT 晶体管 600V/12A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGW25N120 | 功能描述:IGBT 晶体管 FAST IGBT NPT TECH 1200V 25A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGW25N120_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation |
发布紧急采购，3分钟左右您将得到回复。