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参数资料
| 型号： | SHD114617B |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 120 A, SILICON, RECTIFIER DIODE |
| 封装： | SHD-3B, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 88K |
| 代理商： | SHD114617B |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (516) 586-7600 FAX (516) 242-9798
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 641, REV. -
SILICON SCHOTTKY RECTIFIER
Ultra Low Forward Voltage Drop
Typical Voltage Drop 0.30V
Features:
Ultra Low Forward Voltage Drop
Soft Reverse Recovery at Low and High Temperature
Low Power Loss, High Efficiency
Very High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
20
V
Max. Average Forward
Current
IF(AV)
50% duty cycle, rectangular
wave form
120
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 msec, sine pulse
1650
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25
C, I
AS = 3.7 A
L = 6.5 mH
44.5
mJ
Repetitive Avalanche
Current
IAR
IAS decay linearly to 0 in 1
ms
limited by T
J max VA=1.5VR
3.7
A
Max. Junction Temperature
TJ
-
-55 to + 150
C
Max. Storage Temperature
Tstg
-
-55 to + 150
C
Electrical Characteristics:
Characteristics
Symbol
Condition
Typ.
Max.
Units
Max. Forward Voltage Drop
VF1
@ 120A, Pulse, TJ = 25
C
0.42
0.48
V
VF2
@ 120A, Pulse, TJ = 125
C
0.30
0.35
V
VF3
@ 120A, Pulse, TJ = 150
C
0.27
0.32
V
IR1
@VR = 20V, Pulse,
TJ = 25
C
1.3
12.0
mA
IR2
@VR = 20V, Pulse,
TJ = 125
C
1020
1320
mA
Max. Reverse Current
IR3
@VR = 5V, Pulse,
TJ = 100
C
100.8
180
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25
C
fSIG = 1MHz,
ISIG = 50mV (p-p)
6684
8100
pF
SHD114617
SHD114617A
SHD114617B
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