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参数资料
| 型号： | SHDCG225715 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | HERMETIC SEALED, CERAMIC, TO-254, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 140K |
| 代理商： | SHDCG225715 |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4340, REV. -
LOW RDS HERMETIC POWER MOSFET - N-CHANNEL
FEATURES:
60 Volt, 0.008 Ohm, 110A MOSFET for Glidcop version
Isolated Hermetic Metal Package
Ultra Low R
DS (on)
Available with Ceramic Seals and Glidcop leads, use part number SHDCG225715
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
±20
Volts
ON-STATE DRAIN CURRENT
ID25
-
55*
Amps
PULSED DRAIN CURRENT
IDM
-
440
Amps
OPERATING AND STORAGE TEMPERATURE
TJ/TSTG
-55
-
+175
°C
TOTAL DEVICE DISSIPATION
PD
-
215
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
RθJC
-
0.7
°C/W
Note: * current limited by package; die rating is 110A
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250A
BVDSS
60
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 30A
RDS(ON)
Glidcop
Version
-
0.006
0.008
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 30A
RDS(ON)
Standard
Version
-
0.008
0.010
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250A
VGS(th)
1
-
3
Volts
FORWARD TRANSCONDUCTANCE
VDS = 15V, ID = 30A
gfs
30
-
S(1/
)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C
TJ = 125°C
IDSS
-
1
50
A
GATE TO SOURCE LEAKAGE FORWARD
VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -20V
IGSS
-
100
-100
nA
TURN ON DELAY TIME
VDD = 30V
RISE TIME
ID = 55A
TURN OFF DELAY TIME
VGS=10V
FALL TIME
RG = 2.5
td(ON)
tr
td(OFF)
tf
-
20
135
80
150
30
200
120
220
nsec
DIODE FORWARD VOLTAGE
IF = 30A, VGS = 0V
Pulse test, t
≤ 300 s, duty cycle d ≤ 2 %
VSD
-
1.1
1.3
Volts
REVERSE RECOVERY TIME
TJ = 25°C,
IF=30A, VR = 100V
di/dt = 100A/
sec
trr
-
75
120
nsec
REVERSE RECOVERY CHARGE
TJ = 25°C,
IF=30A, VR = 100V
di/dt = 100A/
sec
Qrr
-
0.1
0.25
C
INPUT CAPACITANCE
VGS = 0 V,
OUTPUT CAPACITANCE
VDS = 25 V,
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
Ciss
Coss
Crss
-
7500
1050
700
-
pF
SHD225715
SHDCG225715
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