参数资料
型号: SHDCG625051D
厂商: SENSITRON SEMICONDUCTOR
元件分类: 整流器
英文描述: 10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA
封装: HERMETIC SEALED, CERAMIC, TO-254, 3 PIN
文件页数: 1/4页
文件大小: 60K
代理商: SHDCG625051D
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com 2009 Sensitron Semiconductor
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4336, REV. B
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-254
PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
Ceramic Seal Option – For ceramic seals use part number prefix SHDC
High Frequency Option - Non-magnetic Glidcop leads with ceramic seals are available for improved
performance at high frequency; use part number prefix SHDCG
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
600
Volts
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC for P and N suffixes)
IO
20
Amps
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC for Single and D suffixes)
IO
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, TC = 25
OC
IFRM
50
Amps
MAXIMUM POWER DISSIPATION, TC = 25
OC,
Pd
40
W
MAXIMUM THERMAL RESISTANCE, Junction to Case PER LEG
RθJC
2.5
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg
-55 to 200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be
performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP
TJ = 25°C
Pulsed (If = 10 A PER LEG) Vf
TJ = 150 °C
1.65
2.05
1.80
2.20
Volts
MAXIMUM FORWARD VOLTAGE DROP
TJ = 25°C
Pulsed (If = 6 A PER LEG) Vf
TJ = 150 °C
1.35
1.60
1.45
1.70
Volts
MAXIMUM REVERSE CURRENT (Ir @ 600V PIV PER LEG) TJ = 25 °C
TJ = 150 °C
0.04
0.08
0.15
0.50
mA
JUNCTION CAPACITANCE CT) (Vr =5V) per leg
CT
250
350
pF
TOTAL CAPACITIVE CHARGE
QC per leg
(VR=600V IF=20A di/dt=500A/μs TJ=25°C) This is design information only
35
N/A
nC
SHD625051
SHD625051P
SHD625051N
SHD625051D
相关PDF资料
PDF描述
SHDC625051D 10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA
SHDCG625051N 20 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA
SHDCG626160P 40 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
SHDC626160 20 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
SHDG625061N 40 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA
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