参数资料
型号: SI1102EK
厂商: Silicon Laboratories Inc
文件页数: 4/16页
文件大小: 0K
描述: BOARD EVAL FOR SI1102
应用说明: Si114x irLED Guide AppNote
产品培训模块: Si1102 & Si1120
标准包装: 1
系列: QuickSense™
传感器类型: 近程,红外线
嵌入式:
已供物品: 板,电池
已用 IC / 零件: Si1102
产品目录页面: 626 (CN2011-ZH PDF)
相关产品: 336-1819-1-ND - SENSOR OPTICAL DETECTOR
其它名称: 336-1826
Si11 02
1. Electrical Specifications
Table 1. Absolute Maximum Ratings
Parameter
Supply Voltage
Operating Temperature
Storage Temperature
Voltage on TXO with respect to
Conditions
Min
–0.3
–55
–65
–0.3
Typ
Max
5.5
85
85
5.5
Units
V
°C
°C
V
GND
Voltage on all other Pins with
–0.3
VDD + 0.3
V
respect to GND
Maximum total current through
500
mA
TXO (TXO Active)
Maximum Total Current through
600
mA
TXGD and VSS
Maximum Total Current through
100
mA
all other Pins
ESD Rating
Human body model
2
kV
Table 2. Recommended Operating Conditions
Parameter
Supply Voltage
Operating Temperature
SREN High Threshold
SREN Low Threshold
Active TXO Voltage 1
Peak-to-Peak Power Supply
Symbol
V DD
VIH
VIL
Conditions/Notes
–40 to +85 °C, V DD to VSS
V DD = 3.3 V, 1 kHz–10 MHz no
Min
2.2
–40
VDD – 0.6
Typ
3.3
25
Max
5.25
85
0.6
1.0
50
Units
V
°C
V
V
V
mVPP
Noise Rejection
spurious PRX or less than 20%
reduction in range
on V DD
DC Ambient light
LED Emission Wavelength 2
Edc
V DD = 3.3 V
600
1
850
100
950
klux
nm
Notes:
1. Minimum R1 resistance should be calculated based on LED forward voltage, maximum LED current, LED voltage rail
used, and maximum active TXO voltage.
2. When using LEDs near the min and max wavelength limits, higher radiant intensities may be needed to achieve the
system's proximity sensing performance goals.
4
Rev. 1.0
相关PDF资料
PDF描述
SI1120EK KIT EVAL FOR SI1120
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