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参数资料
| 型号： | SI1865DL-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SW LVL SHIFT 1.2A SC70-6 |
| 标准包装： | 1 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 180 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 1.2A |
| 输入电压： | 1.8 V ~ 8 V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1666 (CN2011-ZH PDF) |
| 其它名称： | SI1865DL-T1-E3DKR |
Si1865DL
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
V DS2 (V) R DS(on) ( Ω )
0.215 at V IN = 4.5 V
I D (A)
± 1.2
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? 215 m Ω Low R DS(on) TrenchFET ?
1.8 to 8
0.300 at V IN = 2.5 V
0.440 at V IN = 1.8 V
± 1.0
± 0.7
? 1.8 V to 8 V Input
? 1.5 V to 8 V Logic Level Control
? Low Profile, Small Footprint SC70-6 Package
? 2000 V ESD Protection On Input Switch, V ON/OFF
DESCRIPTION
The Si1865DL includes a p- and p-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
? Adjustable Slew-Rate
? 1.8 V Rated
? Compliant to RoHS Directive 2002/95/EC
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1865DL operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 1.2 A.
APPLICATION CIRCUITS
20
I L = 1 A
V O N /OFF = 3 V
V I N
4
2, 3
V OUT
16
C i = 10 μF
C o = 1 μF
t r
Q2
R1
6
5
6
C1
12
8
t d(off)
t f
O N /OFF
Q1
C o
LOAD
4
t d(on)
C i
0
1
0
2
4
6
8
10
R2
R2 (k Ω )
R2
COMPONENTS
Si1865DL
G N D
N ote: For R2 s w itching v ariations w ith other V I N /R1
com b inations see Typical Characteristics
Switching Variation
R2 at V IN = 2.5 V, R1 = 20 k Ω
The Si1865DL is ideally suited for high-side load switching in
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 10 k Ω to 1 m Ω *
Typical 0 k Ω to 100 k Ω *
Typical 1000 pF
portable applications. The integrated n-channel level-shift
devices saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
* Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on.
Document Number: 71297
S10-1054-Rev. D, 03-May-10
www.vishay.com
1
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| SI1865DL-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI1865DL-T1-GE3 | 功能描述:IC LOAD SW LVL SHIFT 1.2A SC70-6 RoHS:是 类别:集成电路 (IC) >> PMIC - 电源分配开关 系列:- 标准包装:80 系列:- 类型:USB 开关 输出数:2 Rds（开）:135 毫欧 内部开关:是 电流限制:1.5A 输入电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽）裸露焊盘 供应商设备封装:8-MSOP-PowerPad 包装:管件 配用:TPS2066-1EVM-296-ND - TPS2066-1EVM-296 |
| SI1865DL-T3 | 制造商:Vishay Intertechnologies 功能描述:MOSFET Load Switches 6-Pin SC-70 T/R |
| SI1867DL | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Load Switch with Level-Shift |
| SI1867DL-T1-E3 | 功能描述:MOSFET 1.8-8.0V w/Lvl-Shift RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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