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参数资料
| 型号： | SI3831DV-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC PWR SW BI-DIR PCHAN 6TSOP |
| 标准包装： | 3,000 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 240 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 2.4A |
| 输入电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -25°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.065"，1.65mm 宽） |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
Si3831DV
Vishay Siliconix
Bi-Directional P-Channel MOSFET/Power Switch
PRODUCT SUMMARY
FEATURES
V DS (V)
±7
R DS(on) ( Ω )
0.170 at V GS = - 4.5 V
0.240 at V GS = - 2.5 V
I D (A)
± 2.4
± 2.0
? Halogen-free According to IEC 61249-2-21
Definition
? Low R DS(on) Symmetrical P-Channel MOSFET
? Integrated Body Bias For Bi-Directional
Blocking
DESCRIPTION
The Si3831DV is a low on-resistance p-channel power
MOSFET providing bi-directional blocking and conduction.
Bi-directional blocking is facilitated by combining a 4-terminal
symmetric p-channel MOSFET with a body bias selector
circuit a . Circuit operation automatically biases the p-channel
body to the most positive source/drain potential thereby
maintaining a reverse bias across the diode present between
? 2.5 V to 5.5 V Operation
? Exceeds ± 2 kV ESD Protected
? Solution for High-Side Battery Disconnect Switching
(BDS)
? Supports Battery Switching in Multiple Battery Cell
Phones, PDAs and PCS Products
? Low Profile, Small Footprint TSOP-6 Package
? Compliant to RoHS Directive 2002/95/EC
the source/drain terminals.
Off-state device blocking
characteristics are symmetric, facilitating bi-directional
blocking for high-side battery switching in portable products.
Gate drive is facilitated by negatively biasing the gate relative
to the body potential. The off-state is achieved by biasing the
gate to the most positive supply voltage or to the body
potential. The Si3831DV is available in a 6-pin TSOP-6
package rated for the - 25 °C to 85 °C commercial
temperature range.
APPLICATION CIRCUITS
AC/DC
Adapter
Charger
Body
Bias
Body
Bias
Si3831DV
Loads
Si3831DV
Body
Bias
DC/DC
Body
Bias
Si3831DV
Si3831DV
Figure 1. Charger Demultiplexing
Note:
a. Patents pending.
Document Number: 70785
S09-2276-Rev. D, 02-Nov-09
Charger
Figure 2. Battery Multiplexing (High-Side Switch)
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI3831DV-T1-GE3 | 功能描述:MOSFET 7.0V 2.4A 1.5W 170mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI3850ADV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Specification Comparison |
| SI3850ADV_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Complementary MOSFET Half-Bridge (N- and P-Channel) |
| SI3850ADV_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Complementary MOSFET Half-Bridge (N- and P-Channel) |
| SI3850ADV-T1-E3 | 功能描述:MOSFET 20V 1.4/0.96A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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