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参数资料
| 型号： | SI3865CDV-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | IC LOAD SWITCH LVL SHIFT 6-TSOP |
| 标准包装： | 3,000 |
| 类型： | 高端开关 |
| 输出数： | 1 |
| Rds（开）： | 130 毫欧 |
| 内部开关： | 是 |
| 电流限制： | 2.8A |
| 输入电压： | 1.8 V ~ 12 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.065"，1.65mm 宽） |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
New Product
Si3865CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
600
t d(off)
500
t d(off)
450
300
I L = 1 A
V O N /OFF = 3 V
C i = 10 μF
C o = 1 μF
t f
400
300
I L = 1 A
V O N /OFF = 3 V
C i = 10 μF
C o = 1 μF
t f
200
150
t d(on)
100
t d(on)
t r
0
t r
0
0
20
40
60
8 0
100
0
20
40
60
8 0
100
R2 (k Ω )
Switching Variation
R2 at V IN = 2.5 V, R1 = 300 k ?
R2 (k Ω )
Switching Variation
R2 at V IN = 1.8 V, R1 = 300 k ?
10
Limited by R DS(on) *
1 ms
1
10 ms
100 ms
0.1
1 s, 10 s
DC
T A = 25 °C
Single P u lse
0.01
0.1
1 10
100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
N otes:
P DM
0.1
0.05
t 1
t 2
1. D u ty Cycle, D =
t 1
t 2
0.02
Single Pulse
2. Per Unit Base = R thJA = 130 °C/ W
3. T JM - T A = P DM Z thJA(t)
4. S u rface Mo u nted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69010 .
Document Number: 69010
S10-2142-Rev. C, 20-Sep-10
www.vishay.com
5
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