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| 型号： | SI4214DDY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 8.5A SO8 |
| 标准包装： | 2,500 |
| 系列： | TrenchFET® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 19.5 毫欧 @ 8A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 660pF @ 15V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si4214DDY-T1-E3
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
? V DS /T J
? V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
I D = 250 μA
30
3.0
- 5.2
V
mV/°C
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.2
2.5
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On -State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, TJ = 55 °C
V DS = 5 V, V GS = 10 V
20
100
1
10
nA
μA
A
Drain-Source On-State Resistance b
Forward Transconductance b
R DS(on)
g fs
V GS = 10 V, I D = 8 A
V GS = 4.5 V, I D = 5 A
V DS = 15 V, I D = 8 A
0.016
0.019
27
0.0195
0.023
?
S
Dynamic
a
Input Capacitance
C iss
660
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, I D = 1 MHz
140
86
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 15 V, V GS = 10 V, I D = 8 A
V DS = 15 V, V GS = 4.5 V, I D = 8 A
14.5
7.1
1.9
22
11
nC
Gate-Drain Charge
Q gd
2.7
Gate Resistance
R g
f = 1 MHz
0.5
2.6
5.2
?
Turn-On Delay Time
t d(on)
14
28
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 15 V, R L = 3 ?
I D ? 5 A, V GEN = 4.5 V, R g = 1 ?
45
18
80
35
Fall Time
Turn-On Delay Time
t f
t d(on)
12
7
24
14
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 15 V, R L = 3 ?
I D ? 5 A, V GEN = 10 V, R g = 1 ?
10
15
7
20
30
14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
2.8
30
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 2 A
I F = 5 A, dI/dt = 100 A/μs, T J = 25 °C
0.77
17
9
10
7
1.1
34
18
V
ns
nC
nS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 67907
S11-0653-Rev. A, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| SI4214DDY-T1-GE3 | 功能描述:MOSFET 30V 8.5A 3.1W 19.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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