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参数资料
| 型号： | SI4300DY-TI |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode |
| 中文描述： | N沟道30 V的（副），减少Qg和快速开关MOSFET和肖特基二极管 |
| 文件页数： | 4/5页 |
| 文件大小： | 45K |
| 代理商： | SI4300DY-TI |
Si4300DY
Vishay Siliconix
www.vishay.com
2-4
Document Number: 71772
S-03951—Rev. B, 26-May-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
MOSFET
0.01
0
1
25
30
10
15
10
30
0.1
Time (sec)
0.00
0.04
0.08
0.12
0.16
0.20
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
= 150 C
T
J
= 25 C
I
D
= 9 A
50
10
1
Threshold Voltage
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
-
r
D
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
I
S
5
20
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
2
1
0.1
0.01
10
-3
10
-2
1
10
600
10
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
0.2
0.4
0.6
-50
-25
0
25
50
75
100
125
150
I
D
= 250 A
V
V
G
T
J
- Temperature ( C)
P
相关PDF资料 |
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| SI4346DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4346DY-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4346DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
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相关代理商/技术参数 |
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| Si4300-E-BM | 功能描述:射频无线杂项 Dual-band GSM900 and DCS1800 Pwr Amp RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel |
| Si4300-EVB | 功能描述:射频开发工具 Dual-band GSM900 Pwr Amp EVB RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| SI4300T | 制造商:SILABS 制造商全称:SILABS 功能描述:Tri-Band Monolithic Power Amplifier System |
| Si4300T-B-BM | 功能描述:射频无线杂项 Triple-band GSM900 Pwr Amp RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel |
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