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参数资料
| 型号： | SI4300DY |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode |
| 中文描述： | N沟道30 V的（副），减少Qg和快速开关MOSFET和肖特基二极管 |
| 文件页数： | 2/5页 |
| 文件大小： | 45K |
| 代理商： | SI4300DY |
Si4300DY
Vishay Siliconix
www.vishay.com
2-2
Document Number: 71772
S-03951—Rev. B, 26-May-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 15 V, I
D
= 9 A
I
S
= 1.0 A, V
GS
= 0 V
0.8
V
Gate-Body Leakage
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
100
A
2000
On-State Drain Current
b
I
D(on)
30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
0.0155
0.0185
0.0275
0.033
Forward Transconductance
b
g
fs
V
SD
16
S
Schottky Diode Forward Voltage
b
Dynamic
a
0.47
0.5
V
Total Gate Charge
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
8.7
13
Gate-Source Charge
V
= 15 V,
V
= 5 V, I
= 9 A
DS
GS
2.25
nC
Gate-Drain Charge
D
4.2
Gate Resistance
0.5
2.7
Turn-On Delay Time
11
16
Rise Time
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
8
15
Turn-Off Delay Time
I
D
22
30
ns
Fall Time
9
15
Source-Drain Reverse Recovery Time
I
F
= 2.3 A, di/dt = 100 A/ s
32
60
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47
0.5
V
I
F
= 1.0 A, T
J
= 125 C
V
r
= 24 V
V
r
= 24 V, T
J
= 100 C
V
r
= -24 V, T
J
= 125 C
V
r
= 10 V
0.36
0.42
0.004
0.100
Maximum Reverse Leakage Current
I
rm
0.7
10
mA
3.0
20
Junction Capacitance
C
T
50
pF
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