- 您现在的位置：买卖IC网 > PDF目录368615 > Si4378DY-E3 (Vishay Intertechnology,Inc.) N-Channel 20-V (D-S) MOSFET PDF资料下载
参数资料
| 型号： | Si4378DY-E3 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N沟道20 - V（下局副局长）MOSFET的 |
| 文件页数： | 2/5页 |
| 文件大小： | 55K |
| 代理商： | SI4378DY-E3 |
Si4378DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72918
S-40854—Rev. A, 03-May-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
1.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
1
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 4.5
V
5
On-State Drain Current
a
I
D(on)
V
DS
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5
V, I
D
= 25 A
0.0022
0.0027
V
GS
= 2.5 V, I
D
= 22 A
0.0034
0.0042
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 25 A
150
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.72
1.1
V
Dynamic
b
Input Capacitance
C
iss
8500
Output Capacitance
C
oss
V
DS
= 10 V,
V
GS
= 0 V, f = 1 MHz
1250
pF
Reverse Transfer Capacitance
C
rss
650
Total Gate Charge
Q
g
55
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 25 A
16
nC
Gate-Drain Charge
Q
gd
10
Gate Resistance
R
g
0.8
1.3
2.0
Turn-On Delay Time
t
d(on)
85
130
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
g
= 6
65
100
Turn-Off Delay Time
t
d(off)
I
D
140
210
ns
Fall Time
t
f
50
80
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
25 C
T
C
= 125 C
55 C
2 V
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
相关PDF资料 |
PDF描述 |
|---|---|
| Si4378DY-T1-E3 | N-Channel 20-V (D-S) MOSFET |
| SI4392DY-E3 | N-Channel Reduced Qg, Fast Switching WFET |
| SI4392DY-T1 | N-Channel Reduced Qg, Fast Switching WFET |
| SI4392DY-T1-E3 | N-Channel Reduced Qg, Fast Switching WFET |
| SI4392DY | N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4378DY-T1-E3 | 功能描述:MOSFET 20V 25A 3.5W 2.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4378DY-T1-GE3 | 功能描述:MOSFET 20V 25A 3.5W 2.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4382DY-T1-E3 | 功能描述:MOSFET 30V 4.7mohm@10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4382DY-T1-GE3 | 功能描述:MOSFET 30V 4.7mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4384DY-T1-E3 | 功能描述:MOSFET 30V 15A 1.47W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。