参数资料
型号: SI4392DY-T1-E3
厂商: Vishay Intertechnology,Inc.
英文描述: N-Channel Reduced Qg, Fast Switching WFET
中文描述: N沟道减少Qg和快速切换WFET
文件页数: 3/5页
文件大小: 55K
代理商: SI4392DY-T1-E3
Si4392DY
Vishay Siliconix
Document Number: 72151
S-41427—Rev. D, 26-Jul-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
r
D
)
0
300
600
900
1200
1500
1800
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
0
3
6
9
12
15
0.000
0.006
0.012
0.018
0.024
0.030
0
10
20
30
40
50
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 12.5 A
I
D
Drain Current (A)
V
GS
= 10 V
I
D
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0.008
0.016
0.024
0.032
0.040
0
2
4
6
8
10
T
J
= 25 C
I
D
= 12.5 A
50
10
0.1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
V
GS
= 4.5 V
1
T
J
= 150 C
r
D
(
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