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| 型号： | SI4808DY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH/SCHOTTKY 30V 8SOIC |
| 标准包装： | 2,500 |
| 系列： | LITTLE FOOT® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 800mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si4808DY
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
0.8
± 100
V
nA
Zero Gate Voltage Drain Current
On-State Drain Current b
I DSS
I D(on)
V DS = 24 V, V GS = 0 V
V DS = 24 V, V GS = 0 V, T J = 85 °C
V DS = 5 V, V GS = 10 V
Ch-1
Ch-2
Ch-1
Ch-2
20
1
100
15
2000
μA
A
Drain-Source On-State Resistance b
Forward Transconductance b
R DS(on)
g fs
V GS = 10 V, I D = 7.5 A
V GS = 4.5 V, I D = 6.5 A
V DS = 15 V, I D = 7.5 A
0.018
0.024
22
0.022
0.030
Ω
S
Diode Forward Voltage b
V SD
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.8
0.47
1.2
0.5
V
Dynamic a
Total Gate Charge
Q g
13
20
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Q gs
Q gd
R g
t d(on)
V DS = 15 V, V GS = 10 V, I D = 7.5 A
0.5
2
2.7
8
3.2
16
nC
Ω
Rise Time
t r
V DD = 15 V, R L = 15 Ω
10
20
Turn-Off Delay Time
Fall Time
t d(off)
t f
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
21
10
40
20
ns
Source-Drain Reverse Recovery
Time
t rr
I F = 1.7 A, dI/dt = 100 A/μs
Ch-1
Ch-2
40
32
80
70
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 1.0 A
I F = 1.0 A, T J = 125 °C
Min.
Typ.
0.47
0.36
Max.
0.50
0.42
Unit
V
V R = 30 V
0.004
0.100
Maximum Reverse Leakage Current
I rm
V R = 30 V, T J = 100 °C
0.7
10
mA
V R = - 30 V, T J = 125 °C
3.0
20
Junction Capacitance
C T
V R = 10 V
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71157
S09-0867-Rev. C, 18-May-09
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