参数资料
型号: SI4884
厂商: NXP SEMICONDUCTORS
元件分类: JFETs
英文描述: TrenchMOS⑩ logic level FET
中文描述: 12 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封装: PLASTIC, SO-8
文件页数: 1/12页
文件大小: 89K
代理商: SI4884
SI4884
TrenchMOS logic level FET
Rev. 02 — 12 April 2002
Product data
M3D315
1.
Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS technology.
Product availability:
SI4884 in SOT96-1 (SO8).
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
I
Low on-state resistance
I
Fast switching.
I
DC to DC converters
I
Portable equipment applications.
I
V
DS
= 30 V
I
P
tot
= 2.5 W
I
I
D
= 12 A
I
R
DSon
= 16.5 m
.
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
source (s)
gate (g)
drain (d)
Simplified outline
Symbol
SOT96-1 (SO8)
4
5
1
Top view
8
MBK187
s
d
g
MBB076
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SI4884BDY-T1 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI4884BDY-T1-E3 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4884BDY-T1-GE3 功能描述:MOSFET 30V 16.5A 4.45W 9.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4884DY 功能描述:MOSFET SO8 NCH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube