- 您现在的位置：买卖IC网 > PDF目录372145 > SI4884DY (FAIRCHILD SEMICONDUCTOR CORP) Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | SI4884DY |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| 中文描述： | 0.01 ohm, Si, POWER, FET |
| 封装： | SO-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 89K |
| 代理商： | SI4884DY |
Philips Semiconductors
SI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
5 of 12
9397 750 09582
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
I
D
= 250
μ
A; V
DS
= V
GS
;
Figure 9
V
DS
= 24 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 100
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 10 A;
Figure 7
and
8
V
GS
= 10 V; I
D
= 12 A;
30
1
-
-
-
2
V
V
-
-
-
-
-
-
-
1
5
100
16.5
10.5
μ
A
μ
A
nA
m
m
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
11
8.9
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 1 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
V
DS
= 15 V; I
D
= 10 A;
I
D
= 15 A; V
DD
= 16 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
-
34
17.6
4
4.4
1335 -
391
190
10.6
11.7
37
19
-
-
-
-
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 16 V; f = 1 MHz;
Figure 11
-
-
-
-
-
-
V
DD
= 16 V; R
D
= 10
; V
GS
= 10 V
-
-
0.7
70
1.0
-
V
ns
I
S
= 2.3 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
相关PDF资料 |
PDF描述 |
|---|---|
| SI5311-H | IRED |
| SI5311-H(B) | IRED |
| SI5411-H | IRED |
| SI5411-H(B) | IRED |
| SI5314-H(B) | Piccolo Series Clear Cover Enclosure; NEMA Type:1, 4X, 6, 12, 13; Enclosure Material:Plastic; External Height:2.6"; External Width:3.1"; External Depth:4.3"; Enclosure Color:Light Gray; Cover Color:Transparent RoHS Compliant: Yes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI4884DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| SI4884DY-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4884DY-T1 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4884DY-T1-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI4884DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
发布紧急采购，3分钟左右您将得到回复。