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| 型号： | SI4894BDY-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8.9A 8-SOIC |
| 产品目录绘图： | DY-T1-(G)E3 Series 8-SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 38nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1580pF @ 15V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1662 (CN2011-ZH PDF) |
| 其它名称： | SI4894BDY-T1-GE3DKR |
Si4894BDY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.0
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
30
± 100
1
5
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 12 A
V GS = 4.5 V, I D = 9.8 A
V DS = 15 V, I D = 12 A
0.009
0.013
32
0.011
0.016
Ω
S
Diode Forward Voltage
a
V SD
I S = 2.3 A, V GS = 0 V
0.76
1.1
V
Dynamic b
Input Capacitance
C iss
1580
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 15 V, V GS = 0 V, f = 1 MHz
295
140
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 15 V, V GS = 5 V, I D = 12 A
V DS = 15 V, V GS = 10 V, I D = 12 A
13.2
25.4
5.3
20
38
nC
Gate-Drain Charge
Q gd
4.3
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
I F = 2.3 A, dI/dt = 100 A/μs
0.9
1.8
13
10
33
10
25
2.7
20
15
50
15
40
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
35
30
25
20
15
V GS = 10 V thru 5 V
4V
35
30
25
20
15
10
10
T C = 125 °C
5
3V
5
25 °C
- 55 °C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72993
S09-0540-Rev. D, 06-Apr-09
相关PDF资料 |
PDF描述 |
|---|---|
| SI4904DY-T1-GE3 | MOSFET N-CH 40V 8-SOIC |
| SI4908DY-T1-GE3 | MOSFET N-CH DUAL 40V 5A 8-SOIC |
| SI4914BDY-T1-E3 | MOSFET N-CH 30V 8-SOIC |
| SI4914DY-T1-E3 | MOSFET DUAL N-CH 30V 8-SOIC |
| SI4916DY-T1-GE3 | MOSFET DUAL N-CH 30V 8-SOIC |
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