- 您现在的位置：买卖IC网 > PDF目录225180 > SI6466DQ (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | SI6466DQ |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.8 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TSSOP-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 161K |
| 代理商： | SI6466DQ |
November 2001
2001 Fairchild Semiconductor Corporation
Si6466DQ Rev C(W)
Si6466DQ
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (2.5V to 12V).
Applications
Battery protection
DC/DC conversion
Power management
Load switch
Features
7.8 A, 20 V
RDS(ON) = 15 m
@ VGS = 4.5 V
RDS(ON) = 22 m
@ VGS = 2.5 V
Extended VGSS range (±12V) for battery applications
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
D
S
G
D
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current – Continuous
(Note 1)
7.8
A
– Pulsed
30
PD
Power Dissipation
(Note 1a)
1.4
W
(Note 1b)
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
87
°C/W
(Note 1b)
114
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6466
Si6466DQ
13’’
16mm
3000 units
Si6466DQ
相关PDF资料 |
PDF描述 |
|---|---|
| SI9939DY-T1 | 3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SI9959DY-T1 | 2000 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| SIL30C-12SADJ-VS | 1-OUTPUT DC-DC REG PWR SUPPLY MODULE |
| SIP1X32-301B | IC SOCKET |
| SIP1X32-301B-H | IC SOCKET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI6466DQ-T1 | 功能描述:MOSFET 20V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6466DQ-T1-E3 | 功能描述:MOSFET 20V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI6467BDQ | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI6467BDQ_05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI6467BDQ-T1 | 功能描述:MOSFET 12V 8.0A 1.05W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。