- 您现在的位置：买卖IC网 > PDF目录18931 > SI7120ADN-T1-GE3 (Vishay Siliconix)MOSFET N-CH 60V 1212-8 PPAK PDF资料下载
参数资料
| 型号： | SI7120ADN-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 1212-8 PPAK |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 9.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? 1212-8 |
| 供应商设备封装： | PowerPAK? 1212-8 |
| 包装： | 标准包装 |
| 其它名称： | SI7120ADN-T1-GE3DKR |
Si7120DN
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
TrenchFET ? Power MOSFET
V DS (V)
60
R DS(on) ( Ω )
0.019 at V GS = 10 V
0.028 at V GS = 4.5 V
I D (A)
10
8.2
?
?
?
?
Halogen-free Option Available
RoHS
New Low Thermal Resistance COMPLIANT
PowerPAK ? 1212-8 Package with Low 1.07 mm Profile
?
100 % R g Tested
PowerPAK 1212-8
APPLICATIONS
? Primary Side Switch
? Synchronous Rectification
3.30 mm
1
S
2
S
S
3.30 mm
D
D
3
4
G
8
D
7
6
D
D
G
5
Bottom View
S
Ordering Information: Si7120DN-T1-E3 (Lead (Pb)-free)
Si7120DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
60
± 20
Unit
V
Continuous Source Current (Diode Conduction)
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Single Avalanche Current
Single Avalanche Energy
a
T A = 25 °C
T A = 70 °C
L = 0 1 mH
I D
I DM
I S
I AS
E AS
10
8.0
3.2
40
22
24
6.3
5.1
1.3
A
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.8
2.4
- 55 to 150
260
1.5
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
65
1.9
33
81
2.4
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72771
S-80581-Rev. E, 17-Mar-08
www.vishay.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| Q6P1CXXSG12 | INDICATOR 12V 6MM PROMINENT GRN |
| PE-93 | NAILCLIP SERIES TOOL |
| UB201KW035F-1JB | INDICATOR PB SQ BRIGHT LED GREEN |
| 8037 R/B | ADAPTER HYPO-ACT XR HOOK W/BANA |
| UB201KW035D-3JB | INDICATOR PB AMB ILL SQ FLAT CAP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI7120DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI7120DN-T1 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 6.3A 8-Pin PowerPAK 1212 T/R |
| SI7120DN-T1-E3 | 功能描述:MOSFET 60V 10A 0.019Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7120DN-T1-GE3 | 功能描述:MOSFET 60V 10A 3.8W 19mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI7121DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
发布紧急采购，3分钟左右您将得到回复。