参数资料
型号: SI786CRG-E3
厂商: Vishay Siliconix
文件页数: 9/16页
文件大小: 236K
描述: IC REG QD BUCK/LINEAR 28SSOP
标准包装: 225
拓扑: 降压(降压)(2),线性(LDO)(2)
功能: 任何功能
输出数: 4
频率 - 开关: 300kHz,200kHz
电压/电流 - 输出 1: 控制器
电压/电流 - 输出 2: 控制器
电压/电流 - 输出 3: 5V,5mA
带 LED 驱动器:
带监控器:
带序列发生器:
电源电压: 5.5 V ~ 30 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 28-SSOP(0.209",5.30mm 宽)
供应商设备封装: 28-SSOP
包装: 散装
Document Number: 70189
S-40807-Rev. J, 26-Apr-04
www.vishay.com
9
Vishay Siliconix
Si786
Product is End of Life 3/2014
3.3 V and 5 V Switching Controllers
Each PWM controller on the Si786 is identical with the
exception of the preset output voltages. The controllers only
share three functional blocks (see Figure 2): the oscillator,
the voltage reference (REF) and the 5 V logic supply (V
L
).
The 3.3 V and 5 V controllers are independently enabled with
pins ON
3
 and ON
5
 , respectively. The PWMs are a direct-
summing type, without the typical integrating error amplifier
along with the phase shift which is a side effect of this type of
topology. Feedback compensation is not needed, as long as
the output capacitance and its ESR requirements are met,
according to the Design Considerations section of this data
sheet.
The main PWM comparator is an open loop device which is
comprised of three comparators summing four signals: the
feedback voltage error signal, current sense signal, slope-
compensation ramp and voltage reference as shown in Fig-
ure 3. This method of control comes closer to the ideal of
maintaining the output voltage on a cycle-by-cycle basis.
When the load demands high current levels, the controller is
in full PWM mode. Every cycle from the oscillator asserts the
output latch and drives the gate of the high-side MOSFET for
a period determined by the duty cycle (approximately V
OUT
/
V
IN
 100 %) and the frequency. The high-side switch turns off,
setting the synchronous rectifier latch and 60 ns later, the
rectifier MOSFET turns on. The low-side switch stays on until
the start of the next clock cycle in continuous mode, or until
the inductor current becomes positive again in discontinuous
mode. In over-current situations, where the inductor current
is greater than the 100 mV current-limit threshold, the high-
side latch is reset and the high-side gate drive is shut off.
During low-current load requirements, the inductor current
will not deliver the 25 mV minimum current threshold. The
Minimum Current comparator signals the PWM to enter
pulse-skipping mode when the threshold has not been
reached. Pulse-skipping mode skips pulses to reduce
switching losses, the losses which decrease efficiency the
most at light load. Entering this mode causes the minimum
current comparator to reset the high-side latch at the begin-
ning of each oscillator cycle.
Soft-Start
To slowly bring up the 3.3 V and 5 V supplies, connect
capacitors from SS
3
 and SS
5
 to GND. Asserting ON
3
 or ON
5
starts a 4 礎 constant current source to charge these capac-
itors to 4 V. As the voltage on these pins ramps up, so does
the current limit comparator threshold, to increase the duty
cycle of the MOSFETs to their maximum level. If ON
3
 or ON
5
are left low, the respective capacitor is discharged to GND.
Leaving the SS
3
 or SS
5
 pins open will cause either controller
to reach the terminal over-current level within 10 祍.
Soft start helps prevent current spikes at turn-on and allows
separate supplies to be delayed using external programma-
bility.
Synchronous Rectifiers
Synchronous rectification replaces the Schottky rectifier with
a MOSFET, which can be controlled to increase the effi-
ciency of the circuit.
When the high-side MOSFET is switched off, the inductor will
try to maintain its current flow, inverting the inductors polar-
ity. The path of current then becomes the circuit made of the
Schottky diode, inductor and load, which will charge the out-
put capacitor. The diode has a 0.5 V forward voltage drop,
which contributes a significant amount of power loss,
decreasing efficiency. A low-side switch is placed in parallel
with the Schottky diode and is turned on just after the diode
begins to conduct. Because the r
DS(ON)
 of the MOSFET is
low, the I*R voltage drop will not be as large as the diode,
which increases efficiency. The low-side rectifier is shut off
when the inductor current drops to zero.
Shoot-through current is the result when both the high-side
and rectifying MOSFETs are turned on at the same time.
Break-before-make timing internal to the Si786 manages this
potential problem. During the time when neither MOSFET is
on, the Schottky is conducting, so that the body diode in the
low-side MOSFET is not forced to conduct.
Synchronous rectification is always active when the Si786 is
powered-up, regardless of the operational mode.
Gate-Driver Boost
The high-side N-Channel drive is supplied by a flying-capac-
itor boost circuit (see Figure 4). The capacitor takes a charge
from V
L
 and then is connected from gate to source of the
high-side MOSFET to provide gate enhancement. At power-
up, the low-side MOSFET pulls LX_ down to GND and
charges the BST_ capacitor connected to 5 V. During the
second half of the oscillator cycle, the controller drives the
gate of the high-side MOSFET by internally connecting node
BST_ to DH_. This supplies a voltage 5 V higher than the
battery voltage to the gate of the high-side MOSFET.
Oscillations on the gates of the high-side MOSFET in discon-
tinuous mode are a natural occurrence caused by the LC net-
work formed by the inductor and stray capacitance at the LX_
pins. The negative side of the BST_ capacitor is connected
to the LX_ node, so ringing at the inductor is translated
through to the gate drive.
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