参数资料
型号: SI8502-C-GM
厂商: Silicon Laboratories Inc
文件页数: 6/36页
文件大小: 0K
描述: SENSOR CURR 10A 5.5V UNI 12QFN
标准包装: 74
电流 - 感应: 10A
精确度: ±5%
灵敏度: 196mV/A
电流 - 电源: 4mA
传感器类型: 闭环
电源电压: 2.7 V ~ 5.5 V
输出: 可配置
频率: 50kHz ~ 1MHz
电极标记: 单向
工作温度: -40°C ~ 125°C
封装/外壳: 12-VFQFN
包装: 管件
其它名称: 336-1414-5
SI8502-B-GM
Si85xx
Table 3. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
Value
Unit
SOIC-20
Minimum Air Gap (Clearance)
Minimum External Tracking (Creepage)
Minimum Internal Gap
L(1O1)
L(1O2)
7.6 min
7.6 min
0.2
mm
mm
mm
(Internal Clearance)
Tracking Resistance
CTI
DIN IEC 60112/VDE 0303 Part 1
>175
V
(Comparative Tracking Index)
Resistance (Input-Output) 1
R IO
10 12
?
Capacitance (Input-Output)
Input Capacitance 2
1
C IO
C I
f = 1 MHz
1.4
4.0
pF
pF
Notes:
1. To determine resistance and capacitance, the Si85xx is converted into a 2-terminal device. Pins 1–10 are shorted
together to form the first terminal and pins 11–20 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
2. Measured from input pin to ground.
Table 4. IEC 60664-1 (VDE 0884 Part 2) Ratings
Parameter
Basic Isolation Group
Installation Classification
6
Test Conditions
Material Group
Rated Mains Voltages < 150 V RMS
Rated Mains Voltages < 300 V RMS
Rated Mains Voltages < 400 V RMS
Rated Mains Voltages < 600 V RMS
Rated Mains Voltages < 1000 V RMS
Preliminary Rev. 0.4
Specification
SOIC-20
IIIa
I-IV
I-IV
I-IV
I-IV
I-III
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