参数资料
型号: SI8506-B-IM
厂商: Silicon Laboratories Inc
文件页数: 8/36页
文件大小: 0K
描述: SENSOR CURR 20A 5.5V UNI 12QFN
标准包装: 74
电流 - 感应: 20A
精确度: ±5%
电流 - 电源: 4mA
传感器类型: 闭环
电源电压: 2.7 V ~ 5.5 V
输出: 可配置
频率: 50kHz ~ 1MHz
电极标记: 单向
工作温度: -40°C ~ 125°C
封装/外壳: 12-VFQFN
包装: 管件
其它名称: 336-1418-5
Si85xx
Table 7. Thermal Characteristics
Parameter
Symbol
Test Condition
SOIC-20
4x4 mm
Unit
QFN
IC Junction-to-Air Thermal Resistance
? JA
85
55
°C/W
40
VDD = 5.5 V
30
20
10
0
IIN to IOUT = 20 Amps
0
50
100
150
200
Case Temperature (oC)
Figure 1. SOIC-20 Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Table 8. Absolute Maximum Ratings 1
Parameter
Storage temperature
Ambient temperature under bias
Junction Temperature
Supply voltage
Voltage on any pin with respect to ground
Symbol
T STG
T A
T J
V DD
V IN
Min
–65
–40
–0.5
Typ
Max
+150
+125
150
5.75
VDD + 0.5
Units
°C
°C
°C
V
V
(not including IIN, IOUT)
Output Current Drive
Lead solder temperature (10 s)
Maximum Input Current Rate of Change
Maximum Peak AC Input Current Limit
Thermal Limit (DC Current) 2
Maximum Isolation Voltage (QFN)
Maximum Isolation Voltage (SOIC-20)
ESD (CDM)
ESD (HBM)
ESD (MM)
L O
JEDEC (JESD22-C101C)
JEDEC (JESD22-A114E)
JEDEC (JESD22-A115A)
–1.5
–2500
–250
10
260
1000
200
30
1400
6000
+1.5
+2500
+ 250
mA
oC
A/μs
A
A
V RMS
V RMS
kV
V
V
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2. Refer to “AN329: Extending the Full-Scale Range of the Si85xx” for more information.
8
Preliminary Rev. 0.4
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