参数资料
型号: SI8630EC-B-IS1
厂商: Silicon Laboratories Inc
文件页数: 15/38页
文件大小: 0K
描述: IC ISOLATOR 3CH 3.75KV 16-SOIC
标准包装: 48
输入 - 1 侧/2 侧: 3/0
通道数: 3
电源电压: 2.5 V ~ 5.5 V
电压 - 隔离: 3750Vrms
数据速率: 150Mbps
传输延迟: 8ns
输出类型: 三态
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
工作温度: -40°C ~ 125°C
其它名称: 336-2074-5
Si8630/31/35
Table 6. Insulation and Safety-Related Specifications
Parameter
Nominal Air Gap (Clearance) 1
Nominal External Tracking
(Creepage) 1
Minimum Internal Gap
(Internal Clearance)
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
Resistance (Input-Output) 2
Symbol
L(IO1)
L(IO2)
PTI
ED
R IO
Test
Condition
IEC60112
Value
WB
SOIC-16
8.0
8.0
0.014
600
0.019
10 12
NB
SOIC-16
4.9
4.01
0.014
600
0.019
10 12
Unit
mm
mm
mm
V RMS
mm
?
Capacitance
(Input-Output) 2
C IO
f = 1 MHz
2.0
2.0
pF
Input Capacitance 3
C I
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values. VDE certifies the clearance and
creepage limits as 4.7 mm minimum for the NB SOIC-16 package and 8.5 mm minimum for the WB SOIC-16 package.
UL does not impose a clearance and creepage minimum for component-level certifications. CSA certifies the clearance
and creepage limits as 3.9 mm minimum for the NB SOIC-16 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si86xx is converted into a 2-terminal device. Pins 1–8 are shorted
together to form the first terminal and pins 9–16 are shorted together to form the second terminal. The parameters are
then measured between these two terminals.
3. Measured from input pin to ground.
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Test Conditions
Specification
NB SOIC-16 WB SOIC-16
Basic Isolation Group
Installation Classification
Material Group
Rated Mains Voltages < 150 V RMS
Rated Mains Voltages < 300 V RMS
Rated Mains Voltages < 400 V RMS
Rated Mains Voltages < 600 V RMS
Rev. 1.4
I
I-IV
I-III
I-II
I-II
I
I-IV
I-IV
I-III
I-III
15
相关PDF资料
PDF描述
SI8630BC-B-IS1 IC ISOLATOR 3CH 3.75KV 16-SOIC
POS-9-S PWR OUTLET STRIP SURGE PROTECT
SI8635BC-B-IS1 IC ISOLATOR 3CH 3.75KV 16-SOIC
POS-7-S PWR OUTLET STRIP SURGE PROTECT
SI8631BC-B-IS1 IC ISOLATOR 3CH 3.75KV 16-SOIC
相关代理商/技术参数
参数描述
SI8630EC-B-IS1R 制造商:Silicon Laboratories Inc 功能描述:TRI CH 3.75 KV ISOLATOR, 150M, 3/0, NB SOIC16, LEAD FREE (DE - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC ISOLATOR 3CH 3.75KV 16-SOIC 制造商:Silicon Laboratories Inc 功能描述:Tri Ch 3.75 kV Isolator 150M 3/0
Si8630ED-B-IS 功能描述:隔离器接口集成电路 Tri Ch 5.0 kV Iso 150M 3/0 WB, DO=HI RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
SI8630ED-B-ISR 制造商:Silicon Laboratories Inc 功能描述:TRI CH 5.0 KV ISOLATOR, 150M, 3/0, WB SOIC16, LEAD FREE (DEF - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC ISOLATOR 3CH 5.0KV 16-SOIC 制造商:Silicon Laboratories Inc 功能描述:Tri Ch 5.0 kV Iso 150M 3/0 WB
SI8630ET-IS 功能描述:General Purpose Digital Isolator 5000Vrms 3 Channel 150Mbps 60kV/μs CMTI 16-SOIC (0.295", 7.50mm Width) 制造商:silicon labs 系列:汽车级,AEC-Q100 包装:管件 零件状态:有效 技术:容性耦合 类型:通用 隔离式电源:无 通道数:3 输入 - 输入侧 1/输入侧 2:3/0 通道类型:单向 电压 - 隔离:5000Vrms 共模瞬态抗扰度(最小值):60kV/μs 数据速率:150Mbps 传播延迟 tpLH / tpHL(最大值):13ns,13ns 脉宽失真(最大):4.5ns 上升/下降时间(典型值):2.5ns,2.5ns 电压 - 电源:2.5 V ~ 5.5 V 工作温度:-40°C ~ 125°C 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商器件封装:16-SOIC 标准包装:46
SI8631AB-B-ISR 制造商:Silicon Laboratories Inc 功能描述:TRI CH 2.5KV ISOLATOR, 1M, 2/1, SOIC16, LEAD FREE - Tape and Reel