参数资料
型号: SI8642EC-B-IS1
厂商: Silicon Laboratories Inc
文件页数: 9/44页
文件大小: 0K
描述: IC ISOLATOR 4CH 3.75KV 16-SOIC
标准包装: 48
输入 - 1 侧/2 侧: 2/2
通道数: 4
电源电压: 2.5 V ~ 5.5 V
电压 - 隔离: 3750Vrms
数据速率: 150Mbps
传输延迟: 8ns
输出类型: 三态
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
工作温度: -40°C ~ 125°C
其它名称: 336-2094-5
Si8640/41/42/45
Table 3. Electrical Characteristics
(V DD1 = 3.3 V ±10%, V DD2 = 3.3 V ±10%, T A = –40 to 125 °C)
Parameter
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Undervoltage
Symbol
VDDUV+
VDDUV–
VDD HYS
Test Condition
V DD1 , V DD2 rising
V DD1 , V DD2 falling
Min
1.95
1.88
50
Typ
2.24
2.16
70
Max
2.375
2.325
95
Unit
V
V
mV
Hysteresis
Positive-Going Input Thresh-
VT+
All inputs rising
1.4
1.67
1.9
V
old
Negative-Going Input Thresh-
VT–
All inputs falling
1.0
1.23
1.4
V
old
Input Hysteresis
High Level Input Voltage
Low Level Input Voltage
V HYS
V IH
V IL
0.38
2.0
0.44
0.50
0.8
V
V
V
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
V OH
V OL
I L
loh = –4 mA
lol = 4 mA
V DD1 ,V DD2 – 0.4
3.1
0.2
0.4
±10
V
V
μA
Output Impedance
1
Z O
50
?
Enable Input High Current
Enable Input Low Current
I ENH
I ENL
V ENx = V IH
V ENx = V IL
2.0
2.0
μA
μA
DC Supply Current (All inputs 0 V or at supply)
Si8640Bx, Ex, Si8645Bx
V DD1
V DD2
V DD1
V DD2
V I = 0(Bx), 1(Ex)
V I = 0(Bx), 1(Ex)
V I = 1(Bx), 0(Ex)
V I = 1(Bx), 0(Ex)
1.0
2.4
6.1
2.5
1.6
3.8
9.2
4.0
mA
Si8641Bx, Ex
V DD1
V DD2
V DD1
V DD2
V I = 0(Bx), 1(Ex)
V I = 0(Bx), 1(Ex)
V I = 1(Bx), 0(Ex)
V I = 1(Bx), 0(Ex)
1.4
2.3
5.2
3.6
2.2
3.7
7.8
5.4
mA
Si8642Bx, Ex
V DD1
V DD2
V DD1
V DD2
V I = 0(Bx), 1(Ex)
V I = 0(Bx), 1(Ex)
V I = 1(Bx), 0(Ex)
V I = 1(Bx), 0(Ex)
1.8
1.8
4.4
4.4
2.9
2.9
6.6
6.6
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 ? , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. t PSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.6
9
相关PDF资料
PDF描述
M80-4612005 CONN RECEPT 2MM 20POS 24-28AWG
HMTSW-150-07-G-D-240 CONN HEADER 100POS .100" T/H GLD
SI8641BC-B-IS1 IC ISOLATOR 4CH 3.75V 16-SOIC
TFML-115-01-S-D CONN HEADER .05" 30POS DUAL T/H
SI8631BD-B-IS IC ISOLATOR 3CH 5.0KV 16-SOIC
相关代理商/技术参数
参数描述
SI8642EC-B-IS1R 制造商:Silicon Laboratories Inc 功能描述:QUAD CH 3.75 KV ISOLATOR, 150M, 2/2, NB SOIC16, LEAD FREE (D - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC ISOLATOR 4CH 3.75KV 16-SOIC 制造商:Silicon Laboratories Inc 功能描述:Quad Ch 3.75 kV ISO 150M 2/2 NB
SI8642ED-A-IS 制造商:Silicon Laboratories Inc 功能描述:QUAD CH 5.0 KV ISOLATOR, 150M, 2/2, WB SOIC16, LEAD FREE (DE - Rail/Tube
SI8642ED-A-ISR 制造商:Silicon Laboratories Inc 功能描述:QUAD CH 5.0 KV ISOLATOR, 150M, 2/2, WB SOIC16, LEAD FREE (DE - Tape and Reel
Si8642ED-B-IS 功能描述:隔离器接口集成电路 Quad Ch 5.0kV Iso 150M 2/2 WB, DO=HI RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube
SI8642ED-B-IS2 功能描述:QUAD CH 5KV ISOLATOR 制造商:silicon labs 系列:- 包装:管件 零件状态:在售 技术:容性耦合 类型:通用 隔离式电源:无 通道数:4 输入 - 输入侧 1/输入侧 2:2/2 通道类型:单向 电压 - 隔离:5000Vrms 共模瞬态抗扰度(最小值):50kV/μs 数据速率:150Mbps 传播延迟 tpLH / tpHL(最大值):13ns,13ns 脉宽失真(最大):4.5ns 上升/下降时间(典型值):4ns,4ns 电压 - 电源:2.5 V ~ 5.5 V 工作温度:-40°C ~ 125°C 封装/外壳:16-SOIC(0.295",7.50mm 宽) 供应商器件封装:16-SOIC 标准包装:46