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参数资料
| 型号： | SI8901EDB |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD-protected bidirectional P-Ch. MOSFET for battery protection circuits |
| 中文描述： | ESD保护双向P沟道MOSFET，用于电池保护电路 |
| 文件页数： | 1/3页 |
| 文件大小： | 220K |
| 代理商： | SI8901EDB |
SPICE Device Model Si8901EDB
Vishay Siliconix
Bi-Directional P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
mode is extracted and optimized over the
55 to 125
°
C temperature
ranges under the pulsed 0-to-5V gate drive. The saturated output
impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72950
19-Apr-04
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SI8901EDB_06 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Bi-Directional P-Channel 20-V (D-S) MOSFET |
| SI8901EDB-T2-E1 | 功能描述:MOSFET 20V 4.4A 1.7W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| Si8902B-A01-GS | 功能描述:隔离器接口集成电路 2.5kV iso monitoring ADC with SPI bus RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
| SI8902B-A01-GSR | 制造商:Silicon Laboratories Inc 功能描述:2.5 KV ISOLATED MONITORING ADC WITH SPI BUS - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:IC ADC ISO MONITORING 2.5KV SPI 制造商:Silicon Laboratories Inc 功能描述:IC ADC 10BIT SPI/SRL SOIC 制造商:Silicon Laboratories Inc 功能描述:5.0 kV Monitoring ADC with UART bus |
| Si8902D-A01-GS | 功能描述:隔离器接口集成电路 2.5kV iso monitoring ADC with SPI bus RoHS:否 制造商:Texas Instruments 通道数量:2 传播延迟时间: 电源电压-最大:5.5 V 电源电压-最小:3 V 电源电流:3.6 mA 功率耗散: 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:SOIC-8 封装:Tube |
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