参数资料
型号: SI9100DJ02-E3
厂商: Vishay Siliconix
文件页数: 5/12页
文件大小: 0K
描述: IC REG MULTI CONFIG 4V 14DIP
标准包装: 500
类型: 降压(降压),升压(升压),回扫,正向转换器,隔离式
输出类型: 固定
输出数: 1
输出电压: 4V
输入电压: 10 V ~ 70 V
PWM 型: 电流模式
频率 - 开关: 40kHz ~ 1MHz
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 通孔
封装/外壳: 14-DIP(0.300",7.62mm)
包装: 管件
供应商设备封装: 14-PDIP
Si9100
Vishay Siliconix
PIN CONFIGURATIONS
PDIP-14
1
14
2
3
13
12
PIN DESCRIPTION
Pin
4
5
6
7
Top View
PLCC-20
11
10
9
8
Function
BIAS
+V IN
DRAIN
SOURCE
? V IN
V CC
OSC OUT
14-Pin DIP
1
2
3
4
5
6
7
20-Pin PLCC*
2
3
5
7
8
9
10
3
2
1
20 19
OSC IN
8
11
DISCHARGE
9
12
4
5
6
7
8
18
17
16
15
14
V REF
SHUTDOWN
RESET
COMP
FB
10
11
12
13
14
14
16
17
18
20
*Pins 1, 4, 6, 13, 15, and 19 = N/C
9
10 11 12 13
Top View
ORDERING I NFORMATIO N
Standard
Lead (Pb)-Free
Temperature
Part Number
Si9100DJ02
Si9100DN02
Part Number
Si9100DJ02—E3
Si9100DN02—E3
Range
? 40 to 85 _ C
Package
PDIP-14
PLCC-20
DETAILED DESCRIPTION
Pre-Regulator/Start-Up Section
Due to the low quiescent current requirement of the Si9100
control circuitry, bias power can be supplied from the
unregulated input power source, from an external regulated
low-voltage supply, or from an auxiliary “bootstrap” winding on
the output inductor or transformer.
When power is first applied during start-up, +V IN will draw a
constant current. The magnitude of this current is determined
by a high-voltage depletion MOSFET device which is
connected between +V IN and V CC . This start-up circuitry
provides initial power to the IC by charging an external bypass
capacitance connected to the V CC pin. The constant current is
Document Number: 70000
S-42041—Rev. G, 15-Nov-04
disabled when V CC exceeds 9.4 V. If V CC is not forced to
exceed the 9.4-V threshold, then V CC will be regulated to a
nominal value of 9.4 V by the pre-regulator circuit.
As the supply voltage rises toward the normal operating
conditions, an internal undervoltage (UV) lockout circuit keeps
the output MOSFET disabled until V CC exceeds the
undervoltage lockout threshold (typically 8.8 V). This
guarantees that the control logic will be functioning properly
and that sufficient gate drive voltage is available before the
MOSFET turns on. The design of the IC is such that the
undervoltage lockout threshold will not exceed the
pre-regulator turn-off voltage. Power dissipation can be
minimized by providing an external power source to V CC such
that the constant current source is always disabled.
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