参数资料
型号: SI9102DN02-T1-E3
厂商: Vishay Siliconix
文件页数: 5/10页
文件大小: 0K
描述: IC REG MULTI CONFIG 4V 20PLCC
标准包装: 1,000
类型: 回扫,正向转换器,隔离式
输出类型: 固定
输出数: 1
输出电压: 4V
输入电压: 10 V ~ 120 V
PWM 型: 电流模式
频率 - 开关: 40kHz ~ 1MHz
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-LCC(J 形引线)
包装: 带卷 (TR)
供应商设备封装: 20-PLCC(9x9)
Product is End of Life 3/2014
Si9102
Vishay Siliconix
PIN CONFIGURATIONS
PDIP-14
PIN DESCRIPTION
1
2
3
4
5
6
7
Top View
14
13
12
11
10
9
8
Function
BIAS
+ V IN
DRAIN
SOURCE
- V IN
V CC
OSC OUT
OSC IN
14-Pin DIP
1
2
3
4
5
6
7
8
Pin
20-Pin PLCC*
2
3
5
7
8
9
10
11
DISCHARGE
V REF
9
10
12
14
PLCC-20
SHUTDOWN
RESET
11
12
16
17
3
2
1
20 19
COMP
13
18
FB
14
20
4
5
6
7
18
17
16
15
*Pins 1, 4, 6, 13, 15, and 19 = N/C
ORDERING INFORMATION
8
9
10 11 12 13
14
Standard
Part Number
Si9102DJ02
Lead (Pb)-free
Part Number
Si9102DJ02-E3
Temperature
Range
Package
PDIP-14
Si9102DN02
Si9102DN02-E3
Top View
Si9102DN02-T1 Si9102DN02-T1-E3
(With Tape (With Tape
and Reel)
and Reel)
- 40 to 85 °C
PLCC-20
DETAIL DESCRIPTION
Pre-Regulator/Start-Up Section
Due to the low quiescent current requirement of the Si9102
control circuitry, bias power can be supplied from the unreg-
ulated input power source, from an external regulated low-
voltage supply, or from an auxiliary "bootstrap" winding on
the output inductor or transformer.
When power is first applied during start-up, + V IN will draw a
constant current. The magnitude of this current is determined
by a high-voltage depletion MOSFET device which is con-
nected between + V IN and V CC . This start-up circuitry pro-
vides initial power to the IC by charging an external bypass
capacitance connected to the V CC pin. The constant current
is disabled when V CC exceeds 9.4 V. If V CC is not forced to
exceed the 9.4 V threshold, then V CC will be regulated to a
nominal value of 9.4 V by the pre-regulator circuit.
Document Number: 70001
S-70497-Rev. H, 19-Mar-07
As the supply voltage rises toward the normal operating con-
ditions, an internal undervoltage (UV) lockout circuit keeps
the output MOSFET disabled until V CC exceeds the under-
voltage lockout threshold (typically 8.8 V). This guarantees
that the control logic will be functioning properly and that suf-
ficient gate drive voltage is available before the MOSFET
turns on. The design of the IC is such that the undervoltage
lockout threshold will not exceed the pre-regulator turn-off
voltage. Power dissipation can be minimized by providing an
external power source to V CC such that the constant current
source is always disabled.
Note: During start-up or when V CC drops below 9.4 V the
start-up circuit is capable of sourcing up to 20 mA. This may
lead to a high level of power dissipation in the IC (for a 48 V
input, approximately 1 W). Excessive start-up time caused
by external loading of the V CC supply can result in device
damage. Figure 4 gives the typical pre-regulator current at
start-up as a function of input voltage.
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