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参数资料
| 型号： | SI9150CY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 14-SOIC |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 345kHz |
| 占空比： | 100% |
| 电源电压： | 5.7 V ~ 18 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
Si9150
Vishay Semiconductors
PIN DESCRIPTION (CONT’D)
Pin 9: C T
A capacitor from this pin to ground is charged until it reaches
2.5 V, at which point the capacitor is rapidly discharged. The
resulting sawtooth with about 1 V added is compared to the
input voltage at COMP to determine whether P-GATE and N-
GATE should be high or low. The maximum recommended
value for C OSC is 200 pF (See Typical Characteristics). The
capacitor’s charging current is controlled by Pin 10, R T .
Pin 10: R T
The IC applies 2.5 V to this pin, and the current is mirrored and
applied to Pin 9 while charging the capacitor. The minimum
recommended value of R OSC is 20 k Ω (Figure 1).
Pin 11: GND
Since the Si9150 has a high-side current limit, it is important
that V DD track the voltage on the source of the P-Channel
power MOSFET. For noise immunity, it is best to separate the
logic ground from the power ground. The logic ground should
be decoupled to V DD through at least a 1 μF capacitor. The two
grounds may be connected by a path that is long compared to
the path from V DD to the source of the application’s P-Channel
MOSFET.
Pin 12: N-GATE
This pin is used to drive the application’s N-Channel MOSFET.
When turning the N-Channel MOSFET off, the P-Channel
MOSFET will not be turned on until N-GATE is within a few
volts of ground. This pin is low while either EN or STBY is low.
Pin 13: P-GATE
This pin is used to drive the application’s P-Channel MOSFET.
The break before make circuitry for the P-GATE is compli-
mentary to that for the N-GATE. This pin is high while either EN
or STBY is low.
Pin 14: V DD
This pin powers the IC. The connection between this pin and
the source of the P-Channel FET should be as short as practi-
cal. Read Pin 11’s description for bypassing suggestions.
APPLICATIONS
V IN
100 μF
(20 V)
Si9943
47 pF
1
14
43 μH
220 pF
2
3
13
12
10MQ060
33.2 k Ω
14.7 k Ω
100 μF
+5V
0.039 μF
3.32 k Ω
5600 pF
4
Si9150
11
56.2 k Ω
1000 pF
5
10
200 pF
V IN
33.2 k Ω
1 μF
6
9
33 pF
7
8
1 k Ω
Figure 1. Typical Application Circuit
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?70020 .
www.vishay.com
6
Document Number: 70020
S-40752-Rev. F, 19-Apr-04
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| SI9150DY | 功能描述:DC/DC 开关控制器 Sync Buck Controller RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
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| SI9150DY-T1 | 功能描述:DC/DC 开关控制器 Sync Buck Converter Controller RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
| SI9150DY-T1-E3 | 功能描述:DC/DC 开关控制器 Sync Buck Converter Controller RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
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