参数资料
型号: SI91842DT-33-T1-E3
厂商: VISHAY SILICONIX
元件分类: 固定正电压单路输出LDO稳压器
英文描述: 3.3 V FIXED POSITIVE LDO REGULATOR, 0.22 V DROPOUT, PDSO5
封装: LEAD FREE, TSOT-23, 5 PIN
文件页数: 4/10页
文件大小: 119K
代理商: SI91842DT-33-T1-E3
Si91842
Vishay Siliconix
Document Number: 71732
S-50956—Rev. F, 16-May-05
www.vishay.com
3
SPECIFICATIONS
Limits
40 to 85_C
Tempa
Test Conditions Unless Specified
TA = 25_C, VIN = VOUT(nom) + 1 V, IOUT = 1 mA,
CIN = 1 mF, COUT = 1.0 mF, VSD = 1.5 V
Parameter
Unit
Maxb
Typc
Minb
Tempa
Test Conditions Unless Specified
TA = 25_C, VIN = VOUT(nom) + 1 V, IOUT = 1 mA,
CIN = 1 mF, COUT = 1.0 mF, VSD = 1.5 V
Symbol
f = 1 kHz
Room
60
Ripple Rejection
DVOUT/DVIN
IOUT = 150 mA
f = 10 kHz
Room
40
dB
pp
j
OUT
IN
OUT
f = 100 kHz
Room
30
Dynamic Line Regulation
DVO(line)
VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V
tr/tf = 2 ms, IOUT = 150 mA
Room
20
mV
Dynamic Load Regulation
DVO(load)
IOUT : 1 mA to 150 mA, tr/tf = 2 ms
Room
25
mV
Thermal Shutdown Junction
Temperature
TJ(S/D)
Room
150
_C
Thermal Hysteresis
THYST
Room
20
C
Reverse current
IR
VIN = 6.0 V
Room
1
mA
Short Circuit Current
ISC
VOUT = 0 V
Room
700
mA
Shutdown
Shutdown Supply Current
ICC(off)
VSD = 0 V
Room
0.1
1
mA
SD Pin Input Voltage
VSD
High = Regulator ON (Rising)
Full
1.5
VIN
V
SD Pin Input Voltage
VSD
Low = Regulator OFF (Falling)
Full
0.4
V
Auto Discharge Resistance
R_DIS
Si91842 Only
Room
100
W
SD Pin Input Currentf
IIN(SD)
VSD = 1.5 V, VIN = 6 V
Room
0.7
mA
SD Hysteresis
VHYST(SD)
Full
150
mV
VOUT Turn-On Time
tON
VSD (See Figure 1), ILOAD = 100 mA
Room
50
mS
ERROR Output
ERROR High Leakage
IOFF
ERROR v VIN. VOUT in Regulation
Full
1
mA
ERROR Low Voltage
VOL
ISINK = 0.5 mA
Full
0.4
V
ERROR Voltage Threshold
VERROR
VOUT Below VOUT(nom)g, VIN w 2 V
VOUT Falling, IOUT = 1 mA, VOUT(nom) w 2 V
Full
2
4
6
ERROR Voltage Threshold
VERROR
VOUT(nom)g t 2 V, VIN u 2 V
Full
4
%
ERROR Voltage Threshold
Hysteresis
VHYST(ERROR)
Room
1.5
%
Notes
a.
Room = 25_C, Full = 40 to 85_C.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the output voltage measured with a 1-V
differential, provided that VIN does not not drop below 2.0 V.
e.
Ground current is specified for normal operation as well as “drop-out” operation.
f.
The device’s shutdown pin includes a typical 2-MW internal pull-down resistor connected to ground.
g.
VOUT(nom) is VOUT when measured with a 1-V differential to VIN.
TIMING WAVEFORMS
FIGURE 1. Timing Diagram for Power-Up
VSD
0.95 VNOM
VOUT
VNOM
tON
0 V
VIN
tr v 1 mS
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