参数资料
型号: SI9200EY-E3
厂商: Vishay Siliconix
文件页数: 3/6页
文件大小: 0K
描述: IC PROCESSOR NTWRK SOC 8SOIC
标准包装: 500
类型: CAN 总线驱动器/接收器
驱动器/接收器数: 1/1
规程: CAN
电源电压: 4.75 V ~ 5.25 V
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 散装
Document Number: 70015
S11-0975-Rev. D, 16-May-11
www.vishay.com
3
Vishay Siliconix
Si9200
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Typical values are for DESIGN AID ONLY at TA = 25 °C, not guaranteed nor subject to production testing.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Guaranteed by design, not subject to production test.
Parameter
Symbol
Test Conditions Unless Otherwise Specified
VDD = 4.75 V to 5.25 V
Limits
TA =- 40 V to 125 °C
Unit
Min.b
Typ.c
Max.b
Dynamic
Propagation Delay -
TX to VDIFF High
tON-TX
50
ns
Propagation Delay -
TX to VDIFF Low
tOFF-TX
50
Propagation Delay -
TX to Receive Low
tON-RX
120
Propagation Delay -
TX to Receive High
tOFF-RX
120
Supply
Suppply Current
IDD
TX = VINH, VDD = 5.25 V, RL = 60 (Recessive)
25
mA
TX = VINL, VDD = 5.25 V, RL = 60 (Dominant)
40
75
Transientc
Electrostatic
Discharge
Human Body Model
VESD
CL = 100 pF, RL = 1500
MIL-STD-883D, Method 3015
2000
V
Bus Transient Voltage
VTRANS
RS = 1000 , 1 ms
- 60
60
Protection
Thermal Trip Pointc
TTRP
150
165
180
°C
Thermal Hysteresisc
THYS
10
20
30
Truth Table
TX
Mode
Bus State
CAN_H
CAN_L
RX
Low
Transmit
Dominant
High
Low
High (or Floating)
Transmit and Receive
Recessive
Floating
High
High (or Floating)
Receive
Recessive
High
Low
SPECIFICATIONS
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