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| 型号： | SI9730ABY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/15页 |
| 文件大小： | 0K |
| 描述： | IC CONTROLLR LI-ION 4.2V 8SOIC |
| 标准包装： | 2,500 |
| 功能： | 双电池控制器 |
| 电池化学： | 锂离子（Li-Ion） |
| 工作温度： | -25°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Si9730
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Product is End of Life 3/2014
Parameter
V M
V DD
V C
Limit
V DD - 1.5 V to V DD + 15 V
V SS - 0.3 V to V SS + 12 V
V SS - 0.3 V to V DD + 0.3 V
Unit
V
I S
(V SS ≥ V M )
(V M ≥ V SS )
V M - 0.3 V to V DD + 0.3 V
V SS - 0.3 V to V DD + 0.3 V
Maximum Operating Junction Temperature
Power Dissipation
Thermal Impedance (P Θ JA )
Storage Temperature
125
200
80
- 55 to 150
°C
mW
°C/W
°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
C VC < 10 pF from V C to V DD and V SS , Total
C D
R IS series resistance to sense resistor
DCO Load Capacitance
V DD to V SS
V DD to V M
Operating Temperature Range
Limit
Open to 1.0
< 27
0 to 2000
9
12
- 25 to 85
Unit
μF
k Ω
pF
V
°C
SPECIFICATIONS
Limits
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
T A = - 25 to 85 °C
Min a Typ b Max a
Unit
Power Supply
Supply Current, Charging Operation
I DD_C
V C1 = V C2 = 2.6 V, V DD - V M = 8.4 V
60
Supply Current, Normal Operation
I DD
I DD_UVL
V C1 = V C2 = 4.05 V, V M = V SS
V M = V DD , V C1 = V C2 = 1.7 V
30
1
μA
Undervoltage Lockout Threshold
V M Leakage Current
V M Operating Current
V UVL
I VM_UVL
I VM
Measured at V DD - V SS (Falling)
V C1 = V C2 , V DD - V M = 5.5 V
V C1 = V C2 = 1.7 V, V DD = V M
V C1 = V C2 = 2.6 V, V DD - V M = 8.4 V
3.5
3.7
4.0
1
30
V
μA
Control Logic
DCO Output High Voltage
DCO Rise Time (10 % to 80 %)
DCO Fall Time (80 % to 10 %)
V OH
t r
t f
I OH = - 10 μA, V C1 = V C2 = 3.3 V
V DD - V M = 6.6 V
V C1 = 2 V, V C2 = 2.4 V
V DD - V M = 8.4 V C L = 500 pF, DCO to V SS
V DD - 0.1
7.5
1
V
μs
DCO Output Low Voltage
V OL
I OL = 10 μA
V M = V DD
V C1 = 2 V, V C2 = 2.4 V
V M = V SS
V C1 = V C2 = 4.4 V, I S = V DD
V SS + 0.4
V M + 0.52
V
Analog Section
Current-Limit
Comparator Trip Point
V ILIMIT
V C1 = V C2 = 4.05 V, V M = V SS + 0.25 V
I S Rising, T A = 25 °C
25.5
28
32
mV
Current-Limit
Comparator Temperature Coefficient
dV ILIMIT /dT
0.18
%/°C
Current-Limit
Comparator Response Time
Current Limit
Comparator Input Bias Current
t ILIMIT
I IS
V C1 = V C2 = 3.3 V, V M = V SS + 0.25 V
C L = 50 pF, DCO to V SS , See Figure 2
V C1 = V C2 = 3.3 V, V DD = V M , V IS = V SS
- 125
25
μs
nA
www.vishay.com
2
Document Number: 70658
S-40135-Rev. F, 16-Feb-04
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