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参数资料
| 型号： | SI9956DY |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封装： | PLASTIC, SO-8 |
| 文件页数： | 9/13页 |
| 文件大小： | 253K |
| 代理商： | SI9956DY |
Philips Semiconductors
Si9956DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 July 2001
9 of 13
9397 750 08414
Philips Electronics N.V. 2001. All rights reserved.
9.
Package outline
Fig 14. SOT96-1 (SO8).
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
θ
A
A
1
A
2
b
p
D
H
E
L
p
L
Q
detail X
E
Z
e
c
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03S
MS-012AA
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
95-02-04
97-05-22
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相关代理商/技术参数 |
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| SI9956DYT1 | 制造商:SILICONIX 功能描述:* |
| SI9956DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC N T/R |
| SI9958DY | 功能描述:MOSFET 20V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI9958DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N/P-CH 20V 3.5A 8-Pin SOIC N T/R |
| SI9959DY | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, Matched Pair, N-Channel, SO |
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