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参数资料
| 型号： | SICF10000 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.5 A, SILICON, SIGNAL DIODE |
| 文件页数： | 3/14页 |
| 文件大小： | 98K |
| 代理商： | SICF10000 |
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 249798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 965, REV. -
HIGH VOLTAGE, HIGH DENSITY, FAST RECOVERY
MODULAR RECTIFIER ASSEMBLY
FEATURES:
Up to 15kV reverse voltage
V
R = 2500V – 15000V
Low reverse leakage current
I
F = 500mA (air)
High thermal shock resistance
I
R = 1.0A
Modular construction
I
FSM = 20A
Provides design versatility
Absolute Maximum Ratings
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
(PIV)
MAX. AVG.
DC
OUTPUT
CURRENT
(AIR)
IF(AV)
Amps
STUD TO
HEAT-
SINK
@ 25
°C
IN STILL
OIL
@ 55
°C
1 CYCLE SURGE
CURRENT IFSM
tp = 8.3ms
IFSM
_____________
Amps
REPETITIVE
SURGE
CURRENT
IFRM @ 25
°C
I
2t
tp = 8.3ms
@25
°C
Volts
25
°C
100
°C
Amps
25
°C
Amps
A
2S
SIHVM2.5
SIHVM5
SIHVM7.5
SIHVM10
SIHVM12.5
SIHVM15
2500
5000
7500
10000
12500
15000
0.5
0.2
0.5
20
8.0
1.67
MAXIMUM THERMAL IMPEDANCES
Junction to Ambient
RθJC < 12°C/W
Junction to Stud
RθJS < 6°C/W
Junction to Oil
RθJO < 4.5°C/W
Electrical Characteristics
TYPE
NUMBER
MAXIMUM
REVERSE
CURRENT
@ PIV
IR
Amps
MAXIMUM
PEAK
FORWARD
VOLTAGE
VF @ IF
MAXIMUM
REVERSE
RECOVERY
TIME
trr @ 25
°C
25
°C
100
°C
V
A
sec
SIHVM2.5
SIHVM5
SIHVM7.5
SIHVM10
SIHVM12.5
SIHVM15
1.0
50
7.0
14.0
21.0
28.0
35.0
42.0
0.8
2.0
Notes:
- Operating temperature range –40 to +125°C.
- Storage temperature range –40 to +125°C.
(Temperature range is given for Hermetic Diodes)
Measured on discrete devices prior to assembly.
SIHVM2.5
SIHVM10
SIHVM5
SIHVM12.5
SHVM7.5
SIHVM15
相关PDF资料 |
PDF描述 |
|---|---|
| SICH10000 | 0.5 A, SILICON, SIGNAL DIODE |
| SICH15000 | 0.5 A, SILICON, SIGNAL DIODE |
| SICH7500 | 0.5 A, SILICON, SIGNAL DIODE |
| SI2HVM15 | 0.8 A, SILICON, SIGNAL DIODE |
| SIHVM7.5 | 0.5 A, SILICON, SIGNAL DIODE |
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