型号: | SIE503.3LT |
英文描述: | MB 41C 27#20 14#16 PIN RECP |
中文描述: | 高级督察/女士500 NON-ISOLAT ED系列 |
文件页数: | 1/2页 |
文件大小: | 411K |
代理商: | SIE503.3LT |
相关PDF资料 |
PDF描述 |
---|---|
SIP501.5LT | SIP/SIE 500 NON-ISOLATED SERIES |
SIP501.8LT | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0109-0 00; No. of Positions: 10; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 1; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -35 to 85; General Description: Header; Straight; Single row |
SIP502.5LT | SIP/SIE 500 NON-ISOLATED SERIES |
SIE501.5LT | SIP/SIE 500 NON-ISOLATED SERIES |
SIE501.8LT | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0006-8 00; No. of Positions: 7; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.25; Terminal Pitch (mm): 1.25; Current Rating(Amps)(Max.): 1; Operating Temperature Range (degrees C): -35 to 85; General Description: Housing; Single row; Crimping |
相关代理商/技术参数 |
参数描述 |
---|---|
SIE63V1000UF | 制造商:SIE 功能描述:AL063X810 1 X 1.58 |
SIE726DF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET with Schottky Diode |
SIE726DF-T1-E3 | 功能描述:MOSFET 30V 80A 125W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
SIE726DF-T1-GE3 | 功能描述:MOSFET 30V 175A 125W 2.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
SI-E8000 | 制造商:DIOTEC 制造商全称:Diotec Semiconductor 功能描述:High Voltage Silicon Rectifier Diodes |