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| 型号： | SIM-22STF |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | EMITTER IR 950NM SIDE VIEW TH |
| 标准包装： | 2,000 |
| 电流 - DC 正向(If)： | 50mA |
| 辐射强度(le)最小值@正向电流： | 0.8mW/sr @ 10mA |
| 波长： | 950nm |
| 正向电压： | 1.3V |
| 视角： | 60° |
| 方向： | 侧视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | 径向 |
| 包装： | 袋 |
| 产品目录页面： | 2791 (CN2011-ZH PDF) |
| 其它名称： | 511-1362 SIM-22ST SIM-22ST-ND SIM-22STM |
Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with ? 1.5 lens.
? Applications
? Dimensions (Unit : mm)
Light source for sensors
Notes:
1. Tolerances are ± 0.2 unless
otherwise indicated.
? Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
4.1
4.6 ± 0.1
2. Value in parenthese is size
at base of leads.
( ? P = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
2-C0.7
R0.75
0.15
R0.5
2 ? 0.65
2 ? 0.45
1
(2.54)
2
0.40
0.64
R0.5
? Absolute maximum ratings (Ta=25 ? C)
1 Cathode
2 Anode
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I F
V R
P D
I FP ?
Topr
Tstg
Limits
50
5
80
0.5
? 25 to +85
? 30 to +100
Unit
mA
V
mW
A
° C
° C
? Pulse width = 0.1ms, duty ratio 1%
? Electrical and optical characteristics (Ta=25 ? C)
Parameter
Emitting strength
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Symbol
I E
I E
V F
I R
λ P
Δλ
θ 1/2
Min.
?
0.48
?
?
?
?
?
Typ.
0.8
1.3
1.3
?
950
40
± 30
Max.
?
1.94
1.6
10
?
?
?
Unit
mW/sr
mA
V
μ A
nm
nm
deg
I F =10mA
I F =10mA ?
I F =50mA
V R =5V
I F =10mA
I F =20mA
I F =50mA
Conditions
Response time
Cut-off frequency
tr
fc
tf
?
?
1.0
1.0
?
?
μ s
MHz
I F =50mA
I F =50mA
? According to our measurement procedures.
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.06 - Rev.B
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