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参数资料
| 型号： | SIP2805DY-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BST FLYBK ISO 8SOIC |
| 标准包装： | 2,500 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 频率 - 最大： | 36kHz |
| 占空比： | 50% |
| 电源电压： | 3.6 V ~ 12 V |
| 降压： | 是 |
| 升压： | 是 |
| 回扫： | 是 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
Product is End of Life 3/2014
SiP2800, SiP2801, SiP2802, SiP2803, SiP2804, SiP2805
Vishay Siliconix
Item (a) in the above list is a static dc value, and can
generally be calculated with good accuracy. Item (b) will
increase with operating frequency, but will be fixed for a
given value of F OSC . Item (c) is usually the dominant term in
the calculation of I CC , as the power required to drive the
external power switch will typically increase as F OUT is
increased. The most common example of this is seen in
driving the gate of a power MOSFET. In such applications,
the gate capacitances must be charged once each switching
cycle. This calculation is simplified by using the gate charge
term given by most MOSFET manufacturers, allowing the
use of the formula:
I DRIVE = F OUT x Q g of the chosen MOSFET.
A first approximation of the necessary dropping resistor
value is then given by:
R = [(Nominal V SUPPLY ) - 12 V]/(Nominal I CC )
Here R is in ohms and I CC is in amperes.
FUNCTIONAL BLOCK DIAGRAM
Overcurrent
The resistor limiting the current into the V CC pin should be
selected such that I CC(min..) equals the worst-case maximum
sum of the above currents, while holding I CC(max..) to as low
a value above that number as practicable (for best overall
efficiency), and nevermore than 25 mA above that number
(to avoid exceeding the IC’s internal clamp diode ratings).
V CC must be bypassed to GND with a good quality 0.1 μF
ceramic capacitor, as close to the part as possible. This will
help avoid problems created by high-frequency noise on the
power supply of the part. An electrolytic or tantalum capacitor
may be placed in parallel with the ceramic capacitor if more
capacitance is needed or desired.
V CC
Reference
Voltage
Comparator
-
Leading Edge
Blanking
CS
REF
+
UVLO
13.5 V
1.5 V
SiP2801/4/5 Only
T Q
COMP
Voltage Error
S Q
OUT
FB
Amplifier
-
+
-
R
REF/2
+
PWM
Comparator
OSC
Soft-Start
RC
GND
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72660 .
www.vishay.com
8
For technical questions, contact: powerictechsupport@vishay.com
Document Number: 72660
S11-0598-Rev. E, 25-Apr-11
This document is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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