参数资料
型号: SIP32431DNP3-T1GE4
厂商: Vishay Siliconix
文件页数: 2/13页
文件大小: 0K
描述: IC SWITCH HIGH SIDE 4TDFN
标准包装: 1
类型: 高端
输入类型: 非反相
输出数: 1
导通状态电阻: 105 毫欧
电流 - 输出 / 通道: 1A
电流 - 峰值输出: 1.6A
电源电压: 1.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 4-UFDFN 裸露焊盘
供应商设备封装: 4-TDFN(1.2x1.6)
包装: 标准包装
其它名称: SIP32431DNP3-T1GE4DKR
SiP32431
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
- 40 °C to 85 °C
Package
SC70-6
TDFN4 1.2 mm x 1.6 mm
Marking
MAxx
ADx
Part Number
SiP32431DR3-T1GE3
SiP32431DNP3-T1GE4
Notes:
x = Lot Code
-GE3 denotes halogen-free and RoHS compliant
Please use the SiP32431DR3-T1GE3 to replace SiP32431DR3-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Input Voltage (V IN )
Enable Input Voltage (V ON/OFF )
Output Voltage (V OUT )
Limit
- 0.3 to 6
- 0.3 to 6
- 0.3 to V IN + 0.3
Unit
V
4 pin TDFN4 1.2 mm x 1.6 mm
Maximum Continuous Switch Current (I MAX )
Maximum Pulsed Current (I DM ) V IN
(Pulsed at 1 ms, 10 % Duty Cycle)
ESD Rating (HBM)
Junction Temperature (T J )
Thermal Resistance ( ? JA ) a
Power Dissipation (P D ) a
SC70-6 package
TDFN4 1.2 mm x 1.6 mm
V IN ? 2.5 V
V IN ? 2.5 V
6 pin SC70-6 b
4 pin TDFN4 1.2 mm x 1.6 mm c
6 pin SC70-6 b
c
1.2
1.4
3
1.6
4000
- 40 to 125
220
170
250
324
A
V
°C
°C/W
mW
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 4.5 mW/°C above T A = 70 °C.
c. Derate 5.9 mW/°C above T A = 70 °C, see PCB layout.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Input Voltage Range (V IN )
Operating Temperature Range
www.vishay.com
2
Limit
1.5 to 5.5
- 40 to 85
Unit
V
°C
Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
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