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参数资料
| 型号： | SIR-320ST3F |
| 元件分类： | 红外LED |
| 英文描述： | 3.1 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 68K |
| 代理商： | SIR-320ST3F |
SIR-320ST3F
Sensors
Rev.B
1/3
Infrared light emitting diode, top view type
SIR-320ST3F
The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
marking it ideal for compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Features
1) Compact (
φ3.1mm).
2) High efficiency, high output PO
=9.0mW (IF=50mA).
3) Wide radiation angle
θ=±18deg.
4) Emission spectrum well suited to silicon detectors
(
λP=940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
Dimensions (Unit : mm)
1.1
Max.1
2.5
±
1
Min.24
5.2
±
0.3
2
0.5
4
0.6
2±
0.2
φ3.1±0.2
φ3.8±0.3
(2.5)
1 Anode
2 Cathode
1
2
Notes:
1. Unspecified tolerance
shall be
±0.2.
2. Dimension in parenthesis are
show for reference.
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
PD
IF
IFP
VR
Topr
Tstg
Limits
25 to +85
40 to +85
75
5
100
0.5
Unit
mA
V
mW
A
°C
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Pulse width=0.1msec, duty ratio 1%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SIR-320ST3F_1 | 制造商:ROHM 制造商全称:Rohm 功能描述:Infrared light emitting diode, top view type |
| SIR-320ST3FF | 功能描述:EMITTER IR 940NM T1 RoHS:是 类别:光电元件 >> 红外发射极 系列:- 标准包装:1,200 系列:- 电流 - DC 正向(If):100mA 辐射强度(le)最小值@正向电流:27mW/sr @ 100mA 波长:940nm 正向电压:1.6V 视角:40° 方向:顶视图 安装类型:通孔 封装/外壳:径向 包装:带卷 (TR) |
| SIR-320ST3FN | 制造商:ROHM Semiconductor 功能描述:SIR-320ST3F Series 1.5 V 940 nm Infrared Light Emitting Diodes Top View Type 制造商:ROHM 功能描述:SIR-320ST3F Series 1.5 V 940 nm Infrared Light Emitting Diodes Top View Type |
| SIR323-5 | 功能描述:LED IR 5MM WATER CLEAR RADIAL RoHS:是 类别:光电元件 >> 红外发射极 系列:- 标准包装:1,200 系列:- 电流 - DC 正向(If):100mA 辐射强度(le)最小值@正向电流:27mW/sr @ 100mA 波长:940nm 正向电压:1.6V 视角:40° 方向:顶视图 安装类型:通孔 封装/外壳:径向 包装:带卷 (TR) |
| SIR330DP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
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