参数资料
型号: SIR-341ST3F
元件分类: 红外LED
英文描述: 3.1 mm, 1 ELEMENT, INFRARED LED, 940 nm
封装: PLASTIC PACKAGE-2
文件页数: 1/3页
文件大小: 134K
代理商: SIR-341ST3F
1/2
www.rohm.com
c
2010 ROHM Co., Ltd. All rights reserved.
2010.06 - Rev.B
Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and
a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it
ideal for compact optical control equipment.
Applications
Dimensions (Unit : mm)
Optical control equipment
Light source for remote control devices
Features
1) Compact (
3.1mm).
2) High efficiency, high output PO
8.4mW (IF50mA).
3) Wide radiation angle
1/216deg.
4) Peak wavelength well suited to silicon detectors (
P940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
PD
IF
IFP
VR
Topr
Tstg
Limits
25 to +85
40 to +85
75
5
100
500
Unit
mA
V
mW
mA
°C
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Pulse width=0.1msec, duty ratio 1%
Electrical and optical characteristics (Ta = 25
C)
Parameter
Symbol
PO
IE
fC
IR
VF
Δλ
λP
θ1 / 2
trtf
Min.
5.6
Typ.
8.4
18.1
1.3
940
40
±16
1.0
Max.
1.5
10
Unit
mW
mW/sr
IF
=50mA
IF
=50mA
IF
=50mA
VR
=3V
IF
=50mA
IF
=50mA
IF
=50mA
IF
=50mA
IF
=50mA
μA
nm
V
deg
MHz
μs
Conditions
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Notes:
1. Unspecified tolerance
shall be
±0.2.
2. Dimension in parenthesis are
show for reference.
1
Anode
2
Cathode
1.1
Max.1
2.5
±
1
(2.5)
5.2
±
0.3
Min.24
φ3.1±0.2
φ3.8±0.3
φ3.5
2
0.5
4
0.6
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相关代理商/技术参数
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