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| 型号： | SIR158DP-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V 8-SOIC |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4980pF @ 15V |
| 功率 - 最大： | 83W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | PowerPAK? SO-8 |
| 供应商设备封装： | PowerPAK? SO-8 |
| 包装： | 标准包装 |
| 其它名称： | SIR158DP-T1-GE3DKR |
New Product
SiR158DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a, g
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
30
0.0018 at V GS = 10 V
0.0023 at V GS = 4.5 V
60 g
60 g
41.5 nC
? TrenchFET ? Gen III Power MOSFET
? 100 % R g Tested
PowerPAK ? SO-8
? 100 % UIS Tested
APPLICATIONS
? Low-Side Switch for DC/DC Converters
6.15 mm
1
S
2
S
3
S
5.15 mm
G
- Servers
- POL
- VRM
D
D
4
? OR-ing
8
D
7
6
D
D
G
5
Bottom View
S
Ordering Information: SiR158DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
60 g
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
60 g
40 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
32 b, c
80
60 g
4.9 b, c
50
125
A
mJ
T C = 25 °C
83
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
53
5.4 b, c
W
T A = 70 °C
3.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
18
1.0
23
1.5
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
g. Package Limited.
Document Number: 64730
S09-0318-Rev. A, 02-Mar-09
www.vishay.com
1
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