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参数资料
| 型号： | SIYB60 |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.4 A, SILICON, BRIDGE RECTIFIER DIODE |
| 文件页数： | 1/1页 |
| 文件大小： | 38K |
| 代理商： | SIYB60 |
Type No.
Absolute Maximum Ratings
Electrical Characteristics
[V]
[A]
[C]
[A]
[C]
[V]
[A]
[A]
[s]
[C/W] [C/W] [C/W]
Remarks
Outline
Package
Figure
VRM
IO
Conditions
Tc
IFSM
Tstg
Tj
VF
(max)
Conditions
IF
IR
(max)
VR=VRM
θjl
(max)
θja
(max)
θjc
(max)
trr
(max)
1V
5S
3S
2S
1W
1W (SMD)
Type No.
Absolute Maximum Ratings
Electrical Characteristics
[V]
[A]
[C]
[A]
[C]
[V]
[A]
[A]
[C/W]
Remarks
Outline
Package
Figure
VRM
IO
Conditions
Ta
IFSM
Tstg
Tj
VF
(max)
Conditions
IF
IR
(max)
VR=VRM
θjl
(max)
θja
(max)
Low Noise Bridge Diodes
DIP/SMD Bridge Diodes
*:Ta
*1: Leaded package - Fig. 32; SMD package - Fig. 31
Large IFSM
1Z
(SMD)
1Y
1W
UB (SMD)
1N
1N (SMD)
1Z
1W (SMD)
*1: Leaded package - Fig. 30-1; SMD package - Fig. 29-1
*2: Leaded package - Fig. 26-1; SMD package - Fig. 25-1
*3: Leaded package - Fig. 28; SMD package - Fig. 27
*4: Leaded package - Fig. 32; SMD package - Fig. 31
RECTIFIER DIODES
Low-frequency rectifying
Low Profile
(SMD)
S1YB20
200
0.4
40
30
–40~150
150
1.05
0.2
10
20
150
—
1Y
*1
60
600
S1ZB20
200
60
600
0.5
25
30
–40~150
150
1.05
0.4
10
20
76
—
1Z
*2
80
800
DIUB80
800
0.8
25
30
–55~150
150
1.05
0.4
10
25
80
UB
70
S1NB20
200
60
600
1
25
30
–40~150
150
1.05
0.5
10
15
68
—
1N
*3
80
800
S1WB(A)20
200
30
—
60
600
1
25
–40~150
150
1.0
0.5
10
65
1W
*4
60B
600
50
80
800
30
—
1Y
LN1WBA60
1.1
25*
50
1.0
0.55
10
65
—
1W
*1
LN1VB60
1.2
25*
50
1.0
0.6
16
62
—
1V
21
LN2SB60
600
1.6
25*
120
–40~150
150
1.0
0.8
10
5
10
65
—
2S
22
LN4SB60
4
111
150
0.95
2
6
30
5.5
3S
23
LN6SB60
6
111
170
1.05
3
5
26
3.4
5S
24
18006343654
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