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参数资料
| 型号： | SJ6660R |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 170K |
| 代理商： | SJ6660R |
SENSITRON
SEMICONDUCTOR
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
1N6660, 1N6660R
SJ, SX, SV
DATASHEET 4300, Rev-
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
45
V
Max. Average Forward
Current (Total Package) *
IF(AV)
50% duty cycle @TC =100°C,
rectangular wave form
30
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(Per Leg)
IFSM
8.3 ms, half Sine pulse
300
A
Non-Repetitive Avalanche
Energy
(Per Leg)
EAS
TJ = 25 °C, IAS = 2.0 A,
L = 0.26 mH
0.54
mJ
*
Derate linearly at 300 mA/ °C from TJ = TC = +100 °C to +150 °C. 300 mA /°C times 50 °C = 15 A,
the device rating.
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
(Per Leg)
VF1
VF2
VF3
@ 5 A, Pulse, TJ = 25 °C
@ 15 A, Pulse, TJ = 25 °C
@ 30 A, Pulse, TJ = 25 °C
0.55
0.75
1.00
V
VF4
@ 15 A, Pulse, TJ = -55 °C
0.80
V
Max. Reverse Current
(Per Leg)
IR1
@VR = 45 V, Pulse,
TJ = 25 °C
1.0
mA
IR2
@VR = 45V, Pulse,
TJ = 125 °C
40
mA
Max. Junction Capacitance
(Per Leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
2000
pF
Max. Voltage Rate of
Change (Per Leg)
dv/dt
-
10,000
V/
s
Thermal-Mechanical Specifications:
Characteristics
Symbol
Condition
Specification
Units
Max. Junction Temperature
TJ
-
-65 to +150
°C
Max. Storage Temperature
Tstg
-
-65 to +150
°C
Maximum Thermal
Resistance Junction to Case
(Per Leg)
RθJC
DC operation
1.65
°C/W
Case Style
Hermetic TO-254
相关PDF资料 |
PDF描述 |
|---|---|
| SV6660 | 30 A, SILICON, RECTIFIER DIODE, TO-254AA |
| SV6660R | 30 A, SILICON, RECTIFIER DIODE, TO-254AA |
| SJPA-H3 | 2 A, SILICON, RECTIFIER DIODE |
| SJPA-L3 | 3 A, SILICON, RECTIFIER DIODE |
| SJPB-D9 | 1 A, 90 V, SILICON, SIGNAL DIODE |
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