
200
Diodes
●Surface-Mount
IF (AV)
(A)
1.0
2.0
3.0
IFSM
(A)
50Hz
Single Half Sine Wave
30
40
50
VRM
(V)
30
Tj
Tstg
(°C)
-40 to +150
VF
(V)
max
0.45
IF
(A)
1.0
2.0
3.0
IR
(mA)
VR=VRM
max
0.1
0.2
0.3
IR(H)
(mA)
VR=VRM
max
35
70
100
Ta
(°C)
150
Rth(j-l)
Rth(j-c)
(°C/W)
20
Mass
(g)
0.072
Package
Surface-Mount (SJP)
Part Number
SJPJ-D3*
SJPJ-H3*
SJPJ-L3
Low VF/Low IR Balance “J Series”
4-4 Schottky Barrier Diodes
●Surface-Mount
IF (AV)
(A)
2.0
IFSM
(A)
50Hz
Single Half Sine Wave
40
VRM
(V)
40
30
Tj
Tstg
(°C)
-40 to +150
VF
(V)
max
0.56
0.6
IF
(A)
2.0
IR
(mA)
VR=VRM
max
0.2
IR(H)
(mA)
VR=VRM
max
70
Ta
(°C)
150
Rth(j-l)
Rth(j-c)
(°C/W)
20
Mass
(g)
0.072
Package
Axial
(Body Diameter/Lead Diameter)
Surface-Mount (SJP)
Part Number
SJPE-H3*
SJPE-H4
Low IR “E Series”
●Thru-Hole
IF (AV)
(A)
15
10
15
20
30
10
20
30
IFSM
(A)
50Hz
Single Half Sine Wave
100
60
100
120
150
100
120
150
VRM
(V)
40
60
100
150
Tj
Tstg
(°C)
-40 to +150
VF
(V)
max
0.6
0.72
0.85
0.90
0.85
0.9
IF
(A)
7.5
5.0
7.5
10
15
5
10
15
IR
(mA)
VR=VRM
max
0.75
1
0.1
0.15
0.2
0.3
0.25
0.3
0.5
1.0
1.5
IR(H)
(mA)
VR=VRM
max
75
35
50
75
100
150
125
150
25
50
75
Ta
(°C)
150
150(Tj)
150
Rth(j-l)
Rth(j-c)
(°C/W)
4
1.5
2.0
4
Mass
(g)
2.1
1.55
6.5
2.1
Package
TO-220F(Center-tap)
TO-262
TO-3PF(Center-tap)
TO-220F(Center-tap)
Part Number
FME-24H
FME-2106
FMEN-210A
FMEN-215A*
FMEN-220A
FMEN-230A
MPEN-230AF
FMEN-430A
FME-210B
FME-220B
FME-230B
*Under development
●Thru-Hole
IF (AV)
(A)
3.0
10
20
30
IFSM
(A)
50Hz
Single Half Sine Wave
50
100
150
VRM
(V)
30
Tj
Tstg
(°C)
-40 to +150
VF
(V)
max
0.45
0.47
0.48
IF
(A)
3.0
5.0
10.0
15.0
IR
(mA)
VR=VRM
max
3
5
10
15
IR(H)
(mA)
VR=VRM
max
100
175
350
500
Ta
(°C)
150
Rth(j-l)
Rth(j-c)
(°C/W)
8
4
Mass
(g)
1.2
2.1
Package
Axial
(Body Diameter/Lead Diameter)
Axial(
φ6.5/φ1.4)
TO-220F(Center-tap)
Part Number
RJ 43
FMJ-23L
FMJ-2203*
FMJ-2303
*Under development